Enhancement of Defect Production Rates in n-Type Silicon by Hydrogen Implantation Near 270 K

Abstract

Defect production behavior in hydrogen-implanted n-type silicon has been studied by varying the implantation temperature from 88 K to 303 K. Deep-level transient spectroscopy has been used to reveal electron trap spectra for Schottky diodes fabricated at room temperature after implantation. Metastable defects are observed in addition to vacancy-and hydrogen-related defects. It is found that the production rates of these defects are greatly enhanced by hydrogen implantation near 270 K. It is suggested that hydrogen plays an important role in enhancement of defect production rates, since such defect production behavior is not observed in He-implanted samples.

Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation

“…Hydrogenation of TFT by ion implantation is not a frequently used process [19] and there is no evidence of its impact on poly-Si defect generation. However, for single crystal silicon it was demonstrated that hydrogen implantation causes creation of different defects [20], which may explain more abundant grain boundary trap generation for our studied hydrogenated devices at higher radiation gamma-ray doses.…”