Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

Singh, Vikram; Satyanarayana, V. S. V.; Sharma, Satinder K.; Ghosh, Subrata; Gonsalves, Kenneth E.

doi:10.1039/c3tc31826e

Cited by 24 publications

(26 citation statements)

References 26 publications

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“…Due to these shortcomings, recent attention has focused on the development of nonchemically amplified resists (n-CARs) with improved lithography performance capable of patterning both isolated and dense lines patterns to facilitate the high throughput production of equally isolated (IC logic gates) and dense (DRAM, FRAM memory) areas of devices for future successful implementation of NGL technology nodes. 11 Herein, we investigated the novel n-CARs negative tone resists based on the copolymer poly(4-(methacryloyloxy) phenyldimethylsulfoniumtriflate-co-methylmethacrylate) [poly (MAPDST-co-MMA)], as well as the poly(4-(methacryloyloxy)phenyldimethylsulfoniumtriflate (MAPDST-homopolymer) that are prepared from monomers containing sulfonium groups. These polymeric resists are directly sensitive to radiation and function without utilizing the concept of chemical amplification.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Singh

Satyanarayana

Batina³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Abstract. Although extreme ultraviolet (EUV) lithography is being considered as one of the most promising nextgeneration lithography techniques for patterning sub-20 nm features, the development of suitable EUV resists remains one of the main challenges confronting the semiconductor industry. The goal is to achieve sub-20 nm line patterns having low line edge roughness (LER) of <1.8 nm and a sensitivity of 5 to 20 mJ∕cm 2 . The present work demonstrates the lithographic performance of two nonchemically amplified (n-CARs) negative photoresists, MAPDST homopolymer and MAPDST-MMA copolymer, prepared from suitable monomers containing the radiation sensitive sulfonium functionality. Investigations into the effect of several process parameters are reported. These include spinning conditions to obtain film thicknesses <50 nm, baking regimes, exposure conditions, and the resulting surface topographies. The effect of these protocols on sensitivity, contrast, and resolution has been assessed for the optimization of 20 nm features and the corresponding LER/line width roughness. These n-CARs have also been found to possess high etch resistance. The etch durability of MAPDST homopolymer and MAPDST-MMA copolymer (under SF 6 plasma chemistry) with respect to the silicon substrate are 7.2∶1 and 8.3∶1, respectively. This methodical investigation will provide guidance in designing new resist materials with improved efficiency for EUVL through polymer microstructure engineering.

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Section: Introductionmentioning

confidence: 99%

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Singh

Satyanarayana

Batina³

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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“…Extreme ultraviolet lithography (EUVL) at 13.5 nm is most likely to be the chosen post-optical technique for patterning sub-20-nm half-pitches for chip manufacturing, [2] with high-volume manufacturing (HVM) deployment expected imminently. Along with addressing issues regarding the availability of EUV power sources, the most challenging task to enable EUVL for high-volume production has been the need for improvement of resist performance or the development of novel resist materials capable of meeting industry requirements for ultimate resolution while maintaining a good sensitivity and low line edge roughness.…”

Section: Introductionmentioning

confidence: 99%

“…Along with addressing issues regarding the availability of EUV power sources, the most challenging task to enable EUVL for high-volume production has been the need for improvement of resist performance or the development of novel resist materials capable of meeting industry requirements for ultimate resolution while maintaining a good sensitivity and low line edge roughness. [2] Traditional resists have allowed a half-pitch of 22 nm in production to be achieved, and will likely support the initial HVM introduction of EUV. However, chemically amplified resists naturally limit the ultimate resolution in the resist due to acid diffusion and additionally post exposure instability in the patterned regions.…”

Section: Introductionmentioning

confidence: 99%

“…However, chemically amplified resists naturally limit the ultimate resolution in the resist due to acid diffusion and additionally post exposure instability in the patterned regions. [2] In addition, for sub-20-nm patterning the line edge roughness (LER)and line width roughness (LWR) become critical parameters that put an additional constraint on chemically amplified resists. Recently, attention has focused on the development of nonchemically amplified resists for future lithography nodes, such as an MAPDST-MMA copolymer that contains a sulfonium group to give the material sensitivity for electron beam radiation.…”

Section: Introductionmentioning

confidence: 99%

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Multi-trigger resist for electron beam and extreme ultraviolet lithography

Popescu

McClelland²,

Kazazis

et al. 2018

34th European Mask and Lithography Conference

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The multi-trigger resist (MTR) is a new negative tone molecular resist platform for electron beam lithography, as well as extreme ultraviolet and optical lithography. The performance of xMT resist, the precursor to MTR resist, which shows a good combination of sensitivity, low line edge roughness and high-resolution patterning has previously been reported. [1] In order to overcome limitations induced by acid diffusion, a new mechanism-the multi-trigger concept-has been introduced. The results obtained so far as the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation are presented. A feature size of 13 nm in semi-dense (1:1.5 line/space) patterns, and 22nm diameter pillar patterns are demonstrated in electron beam, and 16 nm half-pitch resolution patterns are demonstrated in (extreme ultraviolet) EUV. An improvement in the LER value is seen in the higher MTR formulations.

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“…Although chemically amplified resists (CARs) have been the workhorses mainly because of their high sensitivity and resolution, they often suffer from the issues of post exposure instability and acid diffusion that ultimately affects the LER or LWR of transferred patterns 14 15 16 17 18 . To overcome these shortcomings, researchers have focused on the development of non-chemically amplified resists (n-CARs) with improved lithography performance and capable of patterning both isolated and dense nanopatterns to ensure high throughput production of equally isolated (IC logic gates) and dense areas of devices (dynamic random-access memory (DRAM), ferroelectric random-access memory (FRAM)) for future successful implementations of next generation lithography (NGL) technology nodes 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 .…”

mentioning

confidence: 99%

Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

Ghosh

Satyanarayana

Pramanick

et al. 2016

Sci Rep

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Given the importance of complex nanofeatures in the filed of micro-/nanoelectronics particularly in the area of high-density magnetic recording, photonic crystals, information storage, micro-lens arrays, tissue engineering and catalysis, the present work demonstrates the development of new methodology for patterning complex nanofeatures using a recently developed non-chemically amplified photoresist (n-CARs) poly(4-(methacryloyloxy)phenyl)dimethylsulfoniumtriflate) (polyMAPDST) with the help of extreme ultraviolet lithography (EUVL) as patterning tool. The photosensitivity of polyMAPDST is mainly due to the presence of radiation sensitive trifluoromethanesulfonate unit (triflate group) which undergoes photodegradation upon exposure with EUV photons, and thus brings in polarity change in the polymer structure. Integration of such radiation sensitive unit into polymer network avoids the need of chemical amplification which is otherwise needed for polarity switching in the case of chemically amplified photoresists (CARs). Indeed, we successfully patterned highly ordered wide-raging dense nanofeatures that include nanodots, nanowaves, nanoboats, star-elbow etc. All these developed nanopatterns have been well characterized by FESEM and AFM techniques. Finally, the potential of polyMAPDST has been established by successful transfer of patterns into silicon substrate through adaptation of compatible etch recipes.

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Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications

Cited by 24 publications

References 26 publications

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Performance evaluation of nonchemically amplified negative tone photoresists for e-beam and EUV lithography

Multi-trigger resist for electron beam and extreme ultraviolet lithography

Patterning highly ordered arrays of complex nanofeatures through EUV directed polarity switching of non chemically amplified photoresist

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