Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm 2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.
Irresistible Materials (IM) is a UK company spun out of the University of Birmingham. It is developing novel resist systems based on the Multi-trigger concept, and spin-on-carbon hardmask materials. IM has developed a new EUV resist that is nonmetal based, does not need a post exposure bake (PEB), and delivers high sensitivity, excellent contact hole resolution, with low LER. It is being readied for HVM through a partnership with Nano-C, Inc. (the Massachusetts based manufacturer of advanced electronic materials and chemicals). The transition to scalability will be the highlight of this discussion.
Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The multi trigger resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), In this study, we present the results that have been obtained using MTR resists by performing EUV exposures on the ASML NXE3300B EUV scanner at IMEC, and also at PSI and the MET tool at Berkeley. We present the lithography performance of the MTR2 resist series, which has been designed for lower line edge roughness. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm 2 , giving a LER of 3.7 nm on the NXE3300. Performance across various process conditions is discussed. We also present a new resist formulation using a crosslinker with a high opacity non-metallic atom attached, which has patterned 13nm lines at PSI and MET.
While the technological progress of Next Generation Lithography (NGL) steadily continues, further progress is required before successful insertion in high volume manufacturing is possible. A key issue is the development of new resists suitable to achieve higher lithographic resolution with acceptable sensitivity and line edge roughness. Molecular resists have been a primary focus of interest for NGL because they promise high resolution and small line edge roughness (LER), but no suitable resist candidate has emerged yet that fulfills all of the industry's criteria. We have previously shown first extreme ultraviolet lithography (EUVL) exposures for a new fullerene derivative based three-component negative tone chemically amplified resist with suitable properties close to or within the target range of the resist metrics as set out in the International Technology Roadmap for Semiconductors for 2016. Here we present the results of our efforts to optimize the EUVL performance of our resist system especially with regards to LER.
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