Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Montgomery, Warren; McClelland, Alexandra; Ure, David; Roth, John R.; Robinson, Alex P. G.

doi:10.1117/12.2258092

Cited by 9 publications

(9 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When a 90°C PEB was applied, the dose to size does not change for the standard or higher energy leaving group. The LWR is negatively impacted, the same result as had been reported previously [10], with an average of 23% increase over all pitches for the standard leaving group, and 19% for the higher energy leaving group. This indicates that there may be a slight benefit to the higher leaving group but the changes are not yet significant because the difference in energy was not substantial enough.…”

Section: Higher Energy Leaving Groupssupporting

confidence: 86%

Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography

O'Callaghan

Popescu

McClelland³

et al. 2019

Advances in Patterning Materials and Processes XXXVI

Self Cite

View full text Add to dashboard Cite

Irresistible Materials (IM) is developing novel resist systems based on the Multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The Multi Trigger Resist is a non-metal based negative tone resist, and consists of a base molecule and a crosslinker, which represent the resist matrix, together with a photoacid generator (PAG). Previously presented MTR2 showed 16 nm half pitch lines patterned with a dose of 38 mJ/cm 2 , giving a LER of 3.7 nm on the NXE3300. Since then, research has been undertaken to improve this resist. In particular we are focusing on improved RLS; reduced top-loss and wiggling at high aspect ratios; eliminating the antimony PAG and further reduction of chemical stochastics. In this study, we present the approaches that have been taken to attain these goals and the initial results. Using the EUV Interference Lithography tool at PSI, a multi trigger resist with a high absorbance non-metal element included in the resist matrix, MTR2627, has been patterned at a pitch of 28nm with an estimated dose of 53mJ/cm 2 and LER of 4.2nm. The LWR is improved in the low dose region, and results also show that a thicker film can be used without pattern collapse below pitch 32nm due to increased stiffness. Using the Berkeley MET tool, this resist matrix with a higher MTR ratio has patterned 24nm lines at a pitch of 48nm with an LER of 1.9nm with a dose of 65mJ/cm 2 . Additionally, we present initial results for an MTR resist series where the antimony PAG has been replaced with a carbon based PAG.

show abstract

Section: Higher Energy Leaving Groupssupporting

confidence: 86%

Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography

O'Callaghan

Popescu

McClelland³

et al. 2019

Advances in Patterning Materials and Processes XXXVI

Self Cite

View full text Add to dashboard Cite

show abstract

“…Furthermore, our partnership with Nano-C means that the required infrastructure for rapid scale-up of our multitrigger resist is already in place. 5 In summary, we have developed a new multitrigger photoresist for use in EUV lithography. Compared with existing photoresist systems (i.e., based on chemical amplification), our approach provides many benefits and advantages, including a low cost of ownership, high photospeed, and high resolution.…”

Section: Figure 1 Schematic Representation Of (A) the Traditional Chmentioning

confidence: 99%

Novel concept for extreme-UV photoresist materials

Montgomery¹,

Robinson²

2017

SPIE Newsroom

View full text Add to dashboard Cite

show abstract

“…The MTR material is a molecular resist, which utilises ring-opening polymerisation (ROP) and incorporates a unique self-quenching mechanism, known as the multi-trigger mechanism, directly in the chemical pathways, to improve performance. The intrinsic self-quenching mechanism in the MTR material, which has been described before [12][13][14][15][16][17][18] provides an advantage in acid diffusion mitigation and offers a benefit on achieving ultimate resolutions with low edge roughness. After the development of the initial prototype of the resist, MTR Generation 1 (Gen1) was developed, incorporating non-metal organic high-opacity moieties for high photo-absorption.…”

Section: Introductionmentioning

confidence: 99%

EUV lithography patterning using multi-trigger resist

Popescu¹,

O'Callaghan²,

McClelland³

et al. 2023

Advances in Patterning Materials and Processes XL

View full text Add to dashboard Cite

Research and development of EUV photoresists capable of supporting future requirements such as high-NA EUV continues. It is foreseen that, to contend with much higher photon-shot noise, resists will require high EUV absorbance to offset the need for thin films in high-NA, where depth of focus may be less than 20nm. We are developing a photoresist based on the multi-trigger concept, which seeks to suppress roughness using a new photoresist mechanism, and which is based on molecular rather than polymeric materials to maximize resolution. MTR Resist absorbance of greater than 18 μm-1 has been measured. Here we present recent NXE3400 results where, by modifying the PAG to optimize the reactions rates in the MTR mechanism, we have reduced the dose requirement compared to the orthodox high opacity MTR resists previously presented. Lines of 14 nm width at p28 nm can be patterned at a dose between 21 mJ/cm2 and 48 mJ/cm2 dependent on formulation ratio, with optimum LWR (3.9 nm, biased) occurring at 43 mJ/cm2 with a film thickness of 20.7 nm. Similarly, we present p34 pillars patterned between 21 mJ/cm2 and 59 mJ/cm2 doses for 17 nm diameter pillars, with a minimum LCDU for 19 nm diameter pillars of 3.05 nm occurring with a 21.7 nm FT at 58 mJ/cm2. The same resist can pattern p36 pillars at 52 mJ/cm2 with an LCDU of 3.44 nm at 18 nm diameter with no measured defects between 15.9 nm and 18.1 nm diameter. The impact of the substrate (such as use of various organic underlayers or SOG layers) on defectivity issues such as bridging or falling pillars will be presented here.

show abstract

Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Cited by 9 publications

References 6 publications

Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography

Multi-trigger resist: novel synthesis improvements for high resolution EUV lithography

Novel concept for extreme-UV photoresist materials

EUV lithography patterning using multi-trigger resist

Contact Info

Product

Resources

About