Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

Frommhold, Andreas; McClelland, Alexandra; Yang, Dongxu; Palmer, Richard E.; Roth, John R.; Ekinci, Yasin; Rosamund, Mark C.; Robinson, Alex P. G.

doi:10.1117/12.2085672

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…One of the new photoresist platforms that rose to prominence has been given the name 'molecular resist' because they represented a departure from polymer based photoresist suspensions to formulations based around 'small molecules'. There are a number of molecular systems currently being investigated ranging from metal oxides (1) Hafnium core nano particles, (2) metal complexes (3) , molecular glasses, and the material discussed here (4)(5)(6) , which is the evolution of IM's work with molecular resists, the Multi-Trigger Resist system.…”

Section: Introductionmentioning

confidence: 99%

Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Montgomery¹,

McClelland²,

Ure³

et al. 2017

SPIE Proceedings

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Irresistible Materials (IM) is a UK company spun out of the University of Birmingham. It is developing novel resist systems based on the Multi-trigger concept, and spin-on-carbon hardmask materials. IM has developed a new EUV resist that is nonmetal based, does not need a post exposure bake (PEB), and delivers high sensitivity, excellent contact hole resolution, with low LER. It is being readied for HVM through a partnership with Nano-C, Inc. (the Massachusetts based manufacturer of advanced electronic materials and chemicals). The transition to scalability will be the highlight of this discussion.

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Section: Introductionmentioning

confidence: 99%

Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Montgomery¹,

McClelland²,

Ure³

et al. 2017

SPIE Proceedings

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“…The baseline material for the optimization efforts is the previously introduced xMT resist [6]. It is a blended formulation of xMT resin, molecular epoxy crosslinker and a sulfonium photoacid generator mixed in 0.2:2:1 weight ratio with the addition of 5% quencher in the form of a photo-decomposable nucleophile that controls epoxy crosslinking [7].…”

Section: Resultsmentioning

confidence: 99%

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Frommhold

McClelland²,

Roth

et al. 2016

Extreme Ultraviolet (EUV) Lithography VII

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We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.

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“…The baseline material for the optimization efforts is the previously introduced xMT resist [12]. It is a blended formulation of xMT resin, molecular epoxy crosslinker and a sulfonium photoacid generator mixed in 0.2:2:1 weight ratio with the addition of a quencher in the form of a photo-decomposable nucleophile that controls epoxy crosslinking [13,14].…”

Section: Resultsmentioning

confidence: 99%

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

Popescu

Frommhold

McClelland³

et al. 2017

SPIE Proceedings

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Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm 2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

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Towards 11nm half-pitch resolution for a negative-tone chemically amplified molecular resist platform for extreme-ultraviolet lithography

Cited by 7 publications

References 6 publications

Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Irresistible Materials multi-trigger resist: the journey towards high volume manufacturing readiness

Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

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