Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Frommhold, Andreas; McClelland, Alexandra; Roth, John R.; Fallica, Roberto; Ekinci, Yasin; Robinson, Alex P. G.

doi:10.1117/12.2219221

Cited by 7 publications

(5 citation statements)

References 8 publications

(8 reference statements)

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“…(a) Comparison of various EUV resists design principles, such as CARs, 62 – 69 multitriggers, 70 – 73 n-CARs, 74 , 75 inorganics, 76 , 77 poly-HSQ, 78 and MOCs, 79 – 82 based on sensitivity towards EUVL and (b) pictorial representation of ultra-high EUV sensitive (2.3 mJ/cm2) of developed In-MAA MOC resists for many folds augmentation of fab-out wafers throughput of next-generation EUVL technology.…”

Section: Resultsmentioning

confidence: 99%

“…where k is associated with the factors related to the optical losses that occur due to the presence of reflective mirrors in the optical route of the EUV light, 83 E D is dose-to-set for negative tone Fig. 6 (a) Comparison of various EUV resists design principles, such as CARs, [62][63][64][65][66][67][68][69] multitriggers, [70][71][72][73] n-CARs, 74,75 inorganics, 76,77 poly-HSQ, 78 and MOCs, [79][80][81][82] resists, P is the power of the EUVL source, and T th is the throughput of the EUVL system (wafers per hour). Here, Eq.…”

Section: Mechanistic Analysis Of In-maa Mocs Resist Formulationmentioning

confidence: 99%

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Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) tradeoff for chip fabricators, which is currently extremely limited. Aim:The development of EUV resist to balance RLS trade-off as well as overcome throughput limitations of h-NA EUV system to facilitate high volume semiconductor manufacturing.Approach: Here, we developed indium-methacrylic acid-based metal-organic clusters resist for h-NA, EUVL. To examine the h-NA single exposure patterning potential of the resist, prescreening by sub-10 nm next-generation lithography (NGL) tools such as electron beam lithography (EBL), and helium ion beam lithography (HIBL) were conducted as a prelude to EUV exposure.Results: Dense ∼13 nm, (l/s) patterns at ∼45 and ∼30 μC∕cm 2 were well resolved by EBL and HIBL, on the top this the line edge roughness (LER) was 2.48 AE 0.04 nm, and etch resistance ∼1.98 and ∼0.34 times lower than Si and SiO 2 ∕Si systems. Also, In-MAA MOCs resist shows ultra-sensitivity of 2.3 mJ∕cm 2 towards h-NA EUVL for patterning up to 26 nm half-pitch line patterns with LER ∼2.36 AE 0.16 nm.

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Section: Resultsmentioning

confidence: 99%

Section: Mechanistic Analysis Of In-maa Mocs Resist Formulationmentioning

confidence: 99%

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Chauhan

Palit

Choudhary

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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“…They optimized the performance of this system at 14 nm hp by 50% using a new quencher. Furthermore, dose improvements up to 60% was observed using metals as additives [78,79]. Irresistible materials Ltd. developed negative resist materials based on a multi-trigger concept.…”

Section: Molecular Chemically Amplified Systemsmentioning

confidence: 99%

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Manouras

Argitis

2020

Nanomaterials

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The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.

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“…Recently, several organizations have focused on new EUV organic and inorganic photoresist platform development [3][4][5][6]. A metal oxide photoresist system which comprises an inorganic core and an organic ligand has been developed at Cornell University [7,8].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in EUV Metal Oxide Photoresists

Kasahara

Kosma

et al. 2017

J. Photopol. Sci. Technol.

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EUV lithography is a promising candidate for the manufacturing of semiconductor devices for the 7 nm node and beyond. The success of any lithography depends on the availability of a suitable resist with high resolution, sensitivity and low LWR. Though polymer type CAR (chemically amplified resist) is the current standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. To meet this target, metal oxide photoresists have been designed and lithographic properties have been studied. In this paper, scum elimination studies with dissolution rate acceleration concepts and new metal core applications are described.

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Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography

Cited by 7 publications

References 8 publications

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

Recent Progress in EUV Metal Oxide Photoresists

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