Abstract:Background: An incredible increase in the integration of electronic chips has pushed the semicon industries to endorse high numerical aperture (h-NA ∼ 0.5), extreme-ultraviolet (EUV) lithography (EUVL) (λ ∼ 13.5 nm) at the commercial scale. Induction of h-NA postulates EUV resists that could outperform the resolution, line pattern roughness, and sensitivity (RLS) tradeoff for chip fabricators, which is currently extremely limited.
Aim:The development of EUV resist to balance RLS trade-off as well as overcome t… Show more
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