Toward On-Chip Mid-Infrared Sensors

Sieger, Markus; Mizaikoff, Boris

doi:10.1021/acs.analchem.5b04143

Cited by 104 publications

(72 citation statements)

References 99 publications

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“…6 In recent years, the wavelength range supported by group IV integrated photonics devices has been extended to longer wavelengths with waveguides, detectors and modulators working in between 2-3 µm 7,8 . With Si-based lasers at hand, high volume applications like chip-to-chip optical interconnects within supercomputers, switches or high-performance servers 9 as well as consumable chips with sensors for point-of-care diagnostics 10,11 would greatly benefit from a fully functional CMOS compatible PIC technology. 12 Moreover, it will allow for the integration of lasers on the same Si chip and thus for the embedding of photonic architectures into Si microtechnology.…”

Section: Introductionmentioning

confidence: 99%

Optically Pumped GeSn Microdisk Lasers on Si

et al. 2016

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The strong correlation between advancing the performance of Si microelectronics and their demand of low power consumption requires new ways of data communication. Photonic circuits on Si are already highly developed except for an eligible on-chip laser source integrated monolithically. The recent demonstration of an optically pumped waveguide laser made from the Si-congruent GeSn alloy, monolithical laser integration has taken a big step forward on the way to an all-inclusive nanophotonic platform in CMOS. We present group IV microdisk lasers with significant improvements in lasing temperature and lasing threshold compared to the previously reported nonundercut Fabry−Perot type lasers. Lasing is observed up to 130 K with optical excitation density threshold of 220 kW/cm 2 at 50 K. Additionally the influence of strain relaxation on the band structure of undercut resonators is discussed and allows the proof of laser emission for a just direct Ge 0.915 Sn 0.085 alloy where Γ and L valleys have the same energies. Moreover, the observed cavity modes are identified and modeled.

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Section: Introductionmentioning

confidence: 99%

Optically Pumped GeSn Microdisk Lasers on Si

et al. 2016

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“…The 5-8 µm region is dominated by water absorption and hence it is of limited use for biochemical sensing. Optical waveguides are the most sensitive form of ATR element [18,19] and low loss waveguides in these regions are of interest for MIR absorption spectroscopy of chemical species [20]. In our earlier work, GeTe 4 chalcogenide waveguides on bulk ZnSe substrates were demonstrated in both the MWIR and LWIR regions.…”

Section: Introductionmentioning

confidence: 99%

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Mittal¹,

Sessions²,

Wilkinson³

et al. 2017

Opt. Mater. Express

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Zinc Selenide (ZnSe) is a promising mid-infrared waveguide material with high refractive index and wide transparency. Optical quality ZnSe thin films were deposited on silicon substrates by RF sputtering and thermal evaporation, and characterized and compared for material and optical properties. Evaporated films were found to be denser and smoother than sputtered films. Rib waveguides were fabricated from these films and evaporated films exhibited losses as low as 0.6 dB/cm at wavelengths between 2.5 µm and 3.7 µm. The films were also used as isolation/lower cladding layers on Si with GeTe 4 as the waveguide core and propagation losses were determined in this wavelength range.

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“…In a feature article Sieger and Mizaikoff [22], the potential for chemical and biological label-free sensing applications is emphasized. A toolbox containing tunable quantum cascade lasers (QCLs) and interband cascade lasers (ICLs) as promising radiation sources, as well as future quantum cascade detectors (QCDs), new mid-infrared waveguides together with nanostructured surfaces utilizing the SEIRA effect establish a promising field of research in mid-infrared label-free sensing.…”

Section: Resultsmentioning

confidence: 99%

Surface-enhanced infrared absorption studies towards a new optical biosensor

Leidner

Stab

Adam

et al. 2016

Beilstein J. Nanotechnol.

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Reflectometric interference spectroscopy (RIfS), which is well-established in the visual regime, measures the optical thickness change of a sensitive layer caused, e.g., by binding an analyte. When operated in the mid-infrared range the sensor provides additional information via weak absorption spectra (fingerprints). The originally poor spectra are magnified by surface-enhanced infrared absorption (SEIRA). This is demonstrated using the broad complex fluid water band at 3300 cm−1, which is caused by superposition of symmetric, antisymmetric stretching vibration, and the first overtone of the bending vibration under the influence of H-bonds and Fermi resonance effect. The results are compared with a similar experiment performed with an ATR (attenuated total reflectance) set-up.

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Toward On-Chip Mid-Infrared Sensors

Cited by 104 publications

References 99 publications

Optically Pumped GeSn Microdisk Lasers on Si

Optically Pumped GeSn Microdisk Lasers on Si

Optical quality ZnSe films and low loss waveguides on Si substrates for mid-infrared applications

Surface-enhanced infrared absorption studies towards a new optical biosensor

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