Total Ionizing Dose Effects on DRAM Data Retention Time

Bacchini, Angelo; Furano, Gianluca; Rovatti, Marco; Ottavi, Marco

doi:10.1109/tns.2014.2365532

Cited by 17 publications

(8 citation statements)

References 11 publications

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“…If not stated otherwise, all the measurements presented in this article were performed at 60 ± 0.3 • C by placing the test setup in a climate chamber with regulated temperature. This realistic operating temperature for a DRAM appears to be a good trade-off between the high temperature (85 • C) generally used in VRT studies (as mentioned in [18] and used in [9]) and the lower temperatures generally used in DRAM Single Event Effects (SEE) testing. It allows a significant activation of the leakage mechanisms to observe a large population of weak cells in the chosen time window while limiting the high temperature annealing effects expected at the maximum recommended operating temperature of 85 • C.…”

Section: Methodsmentioning

confidence: 99%

“…Radiation effects on DRAM retention time is also an active field of study. It is well-known that Total Ionizing Dose (TID) decreases the retention time of DRAM cells by enhancing their leakage current [6]- [9]. Displacement damage, likewise, is V. Goiffon known to increase the leakage current of DRAM cells and so, to reduce their retention time [10], [11].…”

Section: Introductionmentioning

confidence: 99%

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Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Goiffon

Jay

Paillet

et al. 2020

IEEE Trans. Nucl. Sci.

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The effect of gamma-ray and neutron radiations on the Variable Retention Time (VRT) phenomenon occurring in Dynamic Random Access Memory (DRAM) is studied. It is shown that both ionizing radiation and non-ionizing radiation induce VRT behaviors in DRAM cells. It demonstrates that both Si/SiO2 interface states and silicon bulk defects can be a source of VRT. It is also highlighted that radiation induced VRT in DRAMs is very similar to radiation induced Dark Current Random Telegraph Signal (DC-RTS) in image sensors. Both phenomena probably share the same origin but high magnitude electric fields seem to play an important role in VRT only. Defect structural fluctuations (without change of charge state) seem to be the root cause of the observed VRT whereas processes involving trapping and emission of charge carriers are unlikely to be a source of VRT. VRT also appears to be the most probable cause of intermittent stuck bits in irradiated DRAMs.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Goiffon

Jay

Paillet

et al. 2020

IEEE Trans. Nucl. Sci.

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“…However, in DRAMs most of the upsets happen in weakened cells [74]. Furthermore, compared with SRAMs, DRAMs are also more likely to suffer from stuck bits (cells stuck to a value, mostly related to variable bit retention [75]) and single event functional interrupts (SEFIs). The effect of SEFIs in a DRAM ranges from some tens of bits to a full chip wrong per read cycle and can be recovered only with a chip reset or sometimes with a full power cycle [74].…”

Section: Edac Codesmentioning

confidence: 99%

On-Board Decision Making in Space with Deep Neural Networks and RISC-V Vector Processors

Mascio¹,

Menicucci²,

Gill³

et al. 2021

Journal of Aerospace Information Systems

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The use of deep neural networks (DNNs) in terrestrial applications went from niche to widespread in a few years, thanks to relatively inexpensive hardware for both training and inference, and large datasets available. The applicability of this paradigm to space systems, where both large datasets and inexpensive hardware are not readily available, is more difficult and thus still rare. This paper analyzes the impact of DNNs on the system-level capabilities of space systems in terms of on-board decision making (OBDM) and identifies the specific criticalities of deploying DNNs on satellites. The workload of DNNs for on-board image and telemetry analysis is analyzed, and the results are used to drive the preliminary design of a RISC-V vector processor to be employed as a generic platform to enable energy-efficient OBDM for both payload and platform applications. The design of the memory subsystem is carried out in detail to allow full exploitation of the computational resources in typically resource-constrained space systems.

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“…The study in this work started with a curiosity about the reactions of the mitigation circuit when weakened DRAMswhich can happen in many different ways, such as technology shrinkage, normal degradation, and radiationare row hammered. X-ray radiation damages the DRAM cells and induces the aging process, resulting in a shift in the threshold number [21]- [23]. X-ray inspections are commonly used in chip package assembly or product shipping, making the row hammering problems more serious.…”

Section: Introductionmentioning

confidence: 99%

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation

Yun¹,

Park

Bak

et al. 2021

IEEE Access

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The methodological approach of hammering multiple rows is newly proposed to evaluate today's SDRAMs, employed with in-DRAM mitigation circuits. The multiple rows are selected based on the one-row hammering test (single row hammering without refresh commands) and are exploited to defeat the employed mitigation algorithm. We irradiated the target sample using an X-ray to observe the reactions of the mitigation circuit when various combinations of multiple rows are hammered. The results showed a four times reduction in the number of hammering thresholds under the one-row hammering test. The same radiated sample showed no errors when one or a few rows were hammered due to the built-in mitigation circuit. However, multiple rows hammering (MRH) demonstrated its effectiveness by generating errors despite an active mitigation circuit. In this paper, we explore the X-ray damage results in the aging of the DRAM sample and induces vulnerabilities from the row hammering error perspective. Also, we use the error bits detected by MRH to investigate the coverage pitfalls of the mitigation circuit employed in the sample DRAM. Finally, we newly evaluate the remaining retention time under row hammering stress to explain the coverage loss in the mitigation strategy based solely on hammering counts.

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Total Ionizing Dose Effects on DRAM Data Retention Time

Cited by 17 publications

References 11 publications

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

Radiation-Induced Variable Retention Time in Dynamic Random Access Memories

On-Board Decision Making in Space with Deep Neural Networks and RISC-V Vector Processors

Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation

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