Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI Technology

Seo, Dongkyu; Trang, Le Dang; Han, Jin−Woo; Kim, Dong Ha; Lee, Senghyun; Chang, Ik-Joon

doi:10.1109/led.2018.2872345

Cited by 18 publications

(16 citation statements)

References 10 publications

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“…The TID effects, single event effects (SEEs), and displacement damage (DD) can lead to disturbances in the reliable operation of semiconductor devices due to radiation [6][7][8][9][10]. In particular, in the TID effect, the trapped holes in the oxide of transistor in the electron hole pairs (EHP) are caused by radiation and change in the threshold voltage (V T ) [11]. The hole trapped in the oxide results in the inversion charge of the channel region and leads to change in V T .…”

Section: Introductionmentioning

confidence: 99%

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Won¹,

Ham²,

Jeong³

et al. 2019

Applied Sciences

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Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (V T ). The channel insulator was composed of two materials, SiO 2 and HfO 2 . To improve the accuracy of the simulation, the interfacial trap parameter of SiO 2 and HfO 2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less V T shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the V DD and channel doping.

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Section: Introductionmentioning

confidence: 99%

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Won¹,

Ham²,

Jeong³

et al. 2019

Applied Sciences

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“…6(a). Then the N ot distribution profile along the SOI/BOX interface can be calculated by (7), as shown in Fig. 6(b).…”

Section: Simulation Of Tid Effect On Hv Soi Ldmosmentioning

confidence: 99%

“…For TID effect on low-voltage SOI MOSFET, the damage on buried-oxide (BOX) may lead to the increase of OFF-state leakage and coupling effect [11]- [13]. The degradation mechanism is ascribed to the positive oxide trapped charge (N ot ) induced by TID generated near the SOI/BOX interface under the positive applied field bias in the BOX (field lines perpendicular to the SOI/BOX interface pointing from the bottom to the top) [3], [6], [7], [12].…”

mentioning

confidence: 99%

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Yuan

Qiao

et al. 2021

IEEE Trans. Electron Devices

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“…The TDR radiation deposits a large amount of energy in the semiconductor device, generating a huge number of e-h pairs. Different radiation sources (gamma-ray, X-ray, or electron) lead to different charge generation and recombination rates [24][25][26]. In this work, the main source taken into account for the radiation simulation is gamma-ray, which is also the main method for evaluating the TDR effect of semiconductor devices and integrated circuits.…”

Section: Simulation Modelsmentioning

confidence: 99%

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Fan

et al. 2020

Sensors

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This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI Technology

Cited by 18 publications

References 10 publications

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

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