Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

Swerts, Johan; Couet, S.; Liu, E.; Mertens, S.; Lin, Tianyi; Rao, Siddharth; Kim, W.; Elshocht, Sven Van; Furnemont, A.; Kar, Gouri Sankar

doi:10.1109/intmag.2017.8007702

Cited by 4 publications

(3 citation statements)

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“…Although there are some reports on attempts to fabricate top-pin-MTJs, 22,23) currently, bottom-pin-type MTJs are easier to fabricate than top-pin-type MTJs because the pin layer must be physically harder than the free layer and can be fabricated under the free layer. In addition, when nMOSFET is used as the select transistor of a 1T-1MTJ cell, no N-Well, which makes the cell array large, is required.…”

Section: Introductionmentioning

confidence: 99%

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Sasaki

Endoh

2018

Jpn. J. Appl. Phys.

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In this paper, from the viewpoint of cell size and sensing margin, the impact of a novel cross-point-type one transistor and one magnetic tunnel junction (1T-1MTJ) spin-transfer-torque magnetoresistive random access memory (STT-MRAM) cell with a multi-pillar vertical body channel (BC) MOSFET is shown for high density and wide sensing margin STT-MRAM, with a 10 ns writing period and 1.2 V V DD . For that purpose, all combinations of n/p-type MOSFETs and bottom/top-pin MTJs are compared, where the diameter of MTJ (D MTJ ) is scaled down from 55 to 15 nm and the tunnel magnetoresistance (TMR) ratio is increased from 100 to 200%. The results show that, benefiting from the proposed STT-MRAM cell with no back bias effect, the MTJ with a high TMR ratio (200%) can be used in the design of smaller STT-MRAM cells (over 72.6% cell size reduction), which is a difficult task for conventional planar MOSFET based design.

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Section: Introductionmentioning

confidence: 99%

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Sasaki

Endoh

2018

Jpn. J. Appl. Phys.

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“…Different PMA material systems have been investigated for p‐MTJs development in both the FL and RL . Among these materials, tetragonal Mn‐based Heusler alloys have recently attracted a lot of attention.…”

mentioning

confidence: 99%

“…[7,8] Different PMA material systems have been investigated for p-MTJs development in both the FL and RL. [9][10][11][12][13] Among these materials, tetragonal Mn-based Heusler alloys have recently attracted a lot of attention. The epitaxially-grown D0 22 -Mn 3 Ge shows very low M s (70-130 kA m À1 ) due to the ferrimagnetic configuration between Mn atoms in the D0 22 structure.…”

mentioning

confidence: 99%

Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer

Liu¹,

Couet²,

Jochum

et al. 2019

Physica Rapid Research Ltrs

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D022‐Mn3Ge has been studied recently for its large perpendicular magnetic anisotropy (PMA) and low magnetization, which enables it as a potential alternative material for the scaling of magnetic tunnel junctions (MTJs) used in spin‐transfer‐torque magnetic random access memory (STT‐MRAM). Most of the research was carried out on D022‐Mn3Ge deposited by molecular beam epitaxy (MBE) on single crystalline MgO substrates. As the use of single crystalline substrates is not compatible with an industrial integration flow, we developed a polycrystalline MgO seed layer by physical vapor deposition (PVD) on Si. PMA is observed in MBE‐grown D022‐Mn3Ge with coercive field up to 4.5 Tesla, even when the PVD‐MgO seed is only 1 nm thick. It indicates that PVD‐MgO is able to serve as the seed layer for D022‐Mn3Ge integration to MTJs. However, no PMA is observed in Mn3Ge grown by PVD, which is attributed to different kinetics taking place during PVD deposition.

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Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

Nehra

Srivastava

et al. 2023

IEEE Trans. Electron Devices

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Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

Cited by 4 publications

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Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer

Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

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Top pinned magnetic tunnel junction stacks with high annealing tolerance for high density STT-MRAM applications

Cited by 4 publications

References 0 publications

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Cross-point-type spin-transfer-torque magnetoresistive random access memory cell with multi-pillar vertical body channel MOSFET

Structural and Magnetic Properties of Mn3Ge Grown on a Thin Polycrystalline MgO Seed Layer

Investigation of Field-Free Switching of 2-D Material-Based Spin–Orbit Torque Magnetic Tunnel Junction

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Product

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Structural and Magnetic Properties of Mn₃Ge Grown on a Thin Polycrystalline MgO Seed Layer