Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography

Santaclara, Jara G.; Rispens, Gijsbert; Bekaert, Joost; Thiam, A.; Maslow, Mark John; Hoefnagels, Rik; Zuurbier, Nadia; Lent-Protasova, Lidia van; Yin, Fong Choi

doi:10.1117/12.2586645

Cited by 16 publications

(22 citation statements)

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“…Commercial metal oxide resists have already demonstrated industry leading resolution at sub-10 nm half pitch compared to CARs. − Moreover, they are better positioned than CAR resists in overcoming the RLS trade-off . To understand the origin of their superiority and fully exploit the potential of these compounds for EUV applications, the exposure chemistry should be closely examined.…”

Section: Introductionmentioning

confidence: 99%

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Heidkamp

Needham

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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The Extreme Ultraviolet(EUV)-induced radiation exposure chemistry in organotinoxo systems, represented by the archetypal [(R Sn) 12 O 14 (OH) 6 ](A) 2 cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage dominant chemistry, computations have revealed either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at dierent parts of the molecule react dierently to ionization and 1 electron attachment, and have identied such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionizationdeprotonation pathway has also been identied to explain observed evolution of anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

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Section: Introductionmentioning

confidence: 99%

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Heidkamp

Needham

Wang

et al. 2022

ACS Appl. Mater. Interfaces

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“…Particularly for features such as contact holes and vias, positive-tone development is highly advantageous over negative resists since patterning dense contact hole array with negative-tone resist either requires tremendously high exposure dose or two line-space exposures perpendicular to each other 212 . However, to pattern dense contact holes with positive tone, CARs are still the material of choice 213 . Electron beam lithography has previously demonstrated positive tone patternability of self-developing inorganic resists down to 2 nm holes 22 as well as chain-scission PMMA resist with 1 nm holes patterning 214 .…”

Section: Perspectives For Euv Lithographymentioning

confidence: 99%

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Saifullah

Tiwale

Ganesan

2022

J. Micro/Nanopattern. Mats. Metro.

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Background: Metal-containing resists entered the mainstream semiconductor industry process flow to mitigate the low absorbance of extreme ultraviolet (EUV) radiation by thin films of organic resists that lead to poor sensitivity and their inability to handle rigors of development and etching conditions.Aim: The long and rich history of using metal-containing resists in electron beam lithography can offer interesting lessons, pointers, and insights to the relatively newcomer EUV lithography, which is slightly over a decade old.Approach: Electron beam lithography has been enjoying a considerable amount of freedom in the choice of resist materials for close to 50 years; especially the use of metal-containing resists to attain not only single digit nanometer resolution, higher sensitivity, and etch resistance but also lower line-edge roughness. Here, we make a comprehensive historical review of the progress made in the patterning of metal-containing resists in electron beam lithography and derive insights that can be potentially useful in EUV patterning.Perspectives: Small molecular weight resists are proven to be crucial for achieving higher resolution with low line-edge roughness. Simplifying process flow by reducing etch-stack-layers is conceivable with metal-containing resists, along with direct-patterning of functional materials for heterogeneous integration. Efficient contact hole patterning at tighter pitches may be incumbent on progress in positive-tone resist research.

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“…Patterning performances of lines/spaces (LS) are studied through critical dimension (CD), with a resolution range of interest going from HP 16 nm down to HP 8 nm. In-house targets in dose-to-size (DTS), unbiased-linewidth roughness (LWRunb), and Z-factor = CD 3 •LWR 2 •DTS metrics are used for the quantitative assessment of the material performance. Although the Z-factor is a relatively crude metric 6,7 , it is used sufficiently as a single-parameter metric to evaluate the general performance of materials and allow relative comparison between platforms at a given feature size.…”

Section: Asml-psi Resist Screening Programmentioning

confidence: 99%

“…These three physical parameters are, admittedly, codependent and form a tradeoff. As the research community focuses on the commissioning of high-NA to enable the next milestones in scalability 2 , the introduction of photoresist materials that meet the target specifications remains a critical challenge 3 . Dedicated exposure tools, such as microexposure tools and interference tools, and resist testing programs are essential to support the development of the next-generation of resist platforms.…”

Section: Introductionmentioning

confidence: 99%

Progress in EUV resist screening by interference lithography for high-NA lithography

Allenet

Vockenhuber

Yeh

et al. 2021

International Conference on Extreme Ultraviolet Lithography 2021

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The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI. In this work, the EUV interference lithography tool at PSI is used to study materials performance in terms of the resolution-roughness-sensitivity tradeoff, with an emphasis on ultimate resolution. Here, we review the development status of different platforms by considering recent results obtained in the first half of 2021 (H1-2021). Patterning resolution of 11 nm half-pitch is achieved with both CAR and non-CAR materials, which indicates steady progress in the global resist development. Perspectives of this work are discussed towards enabling 8 nm half-pitch resolution solutions.

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Today’s scorecard for tomorrow’s photoresist: progress and outlook towards High-NA EUV lithography

Cited by 16 publications

References 0 publications

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Review of metal-containing resists in electron beam lithography: perspectives for extreme ultraviolet patterning

Progress in EUV resist screening by interference lithography for high-NA lithography

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