To the Issue of the Memristor’s HRS and LRS States Degradation and Data Retention Time

Abstract

In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed.

A Survey of Ensemble Methods for Mitigating Memristive Neural Network Non-idealities

“…Retention is a non-ideality that refers to the non-ideal behavior that arises due to the limited retention time of information in memristors [19]. Essentially, this retention time is determined by how stable the low and high resistance states are (LRS and HRS).…”

Memristor Degradation Analysis Using Auxiliary Volt-Ampere Characteristics

“…There are different types of degradation, e.g., with HRS increase or LRS increase or both at the same time [ 10 , 11 ]. However, the most frequent type is gradual HRS decrease and, as a consequence, the inability to switch from LRS to HRS [ 7 ].…”

Perovskites in Next Generation Memory Devices

“…A dual terminal ReRAM device has an insulating layer wedged between two conducting electrodes. An external electric field can cause the memory cell to flip between two resistance states, known as the low resistance state (LRS, ON state) and high resistance (HRS, OFF state) state [16]. ReRAM is divided into two switching modes: unipolar and bipolar.…”