In this review of experimental studies, the retention time and endurance of memristor RRAM memory elements based on reversible resistive switching in oxide dielectrics are studied. The influence of external parameters—switching pulses and ambient temperature—as well as internal factors—evolution of the concentration of oxygen vacancies in the filament region, the material, structure; the thickness of the active dielectric layer, material of metal electrodes on the long-term stability of high resistance state (HRS) and the low resistance state (LRS) of the memristor is discussed.

No abstract

The absorption and electroabsorption spectra of 2nSe:Co in the region of the L, M, and N lines are investigated. The experimental data indicate that these lines arise from transitions to excited states of d7 configuration. The electroabsorption spectrum exhibits new a', Po, yo, a' , and E' lines that have intense LO phonon replicas. These lines result from the formation of donor excitons according to the scheme d7 + hw - [d6e]. The d7 configuration ground state 4A, is separated from the bottom of the conduction band by 2.565 eV assuming a hydrogen-like electron binding energy. ZnSe: Co single crystals were grown from the melt under the pressure of an inert gas with cobalt added to the meh. Three crystals were synthesized with cobalt contents

No abstract

No abstract