Perovskites in Next Generation Memory Devices

Abstract

Although perovskites are widely employed in other industries such as photovoltaics and light-emitting diodes (LEDs), digital technology is rapidly gaining pace in today’s market and shows no signs of abating. As a result, the progress of system memory and memory storage has accelerated into new inventions. The invention of dynamic Random-Access Memory (RAM) in the 1960s laid the groundwork for today’s multibillion-dollar memory technology sector. Resistive switching (RS) capabilities of perovskite-based materials such as perovskite oxides and metal halides have been extensively studied. Chemical stability, high endurance, quick writing speed, and strong electronic interaction correlation are some of the benefits of employing perovskites in RS devices. This chapter will investigate the progress of system memory and memory storage employing perovskites, the advantageous properties of perovskites utilized in memory devices, the various types of RS employing perovskites, as well as the research challenges that perovskite-based memory systems face in future commercial development.