2010
DOI: 10.1109/tns.2010.2049122
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Timing Performances of Large Area Silicon Photomultipliers Fabricated at STMicroelectronics

Abstract: In this paper the results of charge and timing resolution characterization realized at Fermi National Accelerator Laboratory (Fermilab) on 3 5 3 5 mm 2 Silicon PhotoMultipliers fabricated at STMicroelectronics Catania R&D clean room facilities are presented. The device consists of 4900 microcells and has a geometrical fill factor of 36%. Timing measurements were realized at different wavelengths by varying the overvoltage and the temperature applied to the photodetector. The results shown in this manuscript de… Show more

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Cited by 47 publications
(26 citation statements)
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“…If compared with standard vacuum PMTs, SiPMs show higher quantum efficiency, especially in the near infrared, low operating voltage (<30 V) with a comparable gain (>10 6 ), ruggedness, compact size, and reduced sensitivity with temperature, voltage fluctuations, and magnetic fields [6]- [12]. Furthermore, solid-state technology owns the typical advantages of the planar integration process: SiPMs can be manufactured at lower costs and with higher reproducibility with respect to PMTs [13], [14]. SiPMs show several advantages compared with APDs fabricated in conventional CMOS technology [15], such as: low bias voltage, higher responsivity, and photon detection efficiency in the visible and near infrared range, excellent single-photon response, fast rise time ( 1 ns), and low power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…If compared with standard vacuum PMTs, SiPMs show higher quantum efficiency, especially in the near infrared, low operating voltage (<30 V) with a comparable gain (>10 6 ), ruggedness, compact size, and reduced sensitivity with temperature, voltage fluctuations, and magnetic fields [6]- [12]. Furthermore, solid-state technology owns the typical advantages of the planar integration process: SiPMs can be manufactured at lower costs and with higher reproducibility with respect to PMTs [13], [14]. SiPMs show several advantages compared with APDs fabricated in conventional CMOS technology [15], such as: low bias voltage, higher responsivity, and photon detection efficiency in the visible and near infrared range, excellent single-photon response, fast rise time ( 1 ns), and low power consumption.…”
Section: Introductionmentioning
confidence: 99%
“…At least two flavors exist of SiPMs: analog and digital. An analog SiPM (A-SiPM) consists of an array of avalanche photodiodes operating in Geiger mode (also known as single-photon avalanche diodes or SPADs), whose avalanche currents are summed in one node [1][2][3][4][5][6]. The resulting current is proportional to the number of detected photons, thus providing single-and multiplephoton detection capability.…”
mentioning
confidence: 99%
“…Single channel SiPM detectors, coupled one-to-one to scintillation crystals, have rapidly demonstrated the potential of SiPM-based PET scanners. 5,6 Recently there has been significant academic and industrial development of large area multichannel SiPM technologies [7][8][9][10][11][12][13][14][15][16][17][18][19][20] giving rise to many SiPM-based detector and scanner designs. Besides developing new high performance devices, large-area SiPM modules are also being developed, and some of these modules now include the readout electronics to facilitate the fabrication of PET scanners.…”
Section: Introductionmentioning
confidence: 99%