Abstract:We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/µm 2 , at an excess bias of 4V when we measure 10 µm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.
We present a 4 × 4 array of digital silicon photomultipliers (D-SiPMs) capable of timestamping up to 48 photons per D-SiPM and we show the advantage of generating multiple timestamps in the context of positron emission tomography (PET). The D-SiPMs have a pitch of 800 μm and comprise 416 pixels each; the timing resolution achieved by the SiPMs is 179 ps FWHM, while each pixel has a fill factor of up to 57 % and a single-photon timing resolution of 114 ps.
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