Time-resolved photoluminescence measurements of InGaAs/InP multiple-quantum-well structures at 13-μm wavelengths by use of germanium single-photon avalanche photodiodes

Abstract

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/lnP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.

Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm

“…Overall, the NEP was similar across the range of excess voltages measured. However, 4% SPDE and an NEP of 1 × 10 −14 WHz −1/2 at a wavelength of 1310 nm compares well with other work where NEPs of ∼1.6 × 10 −14 and 4 ×10 −15 WHz −1/2 were reported using commercially available planar all-Ge APDs operated in the Geiger mode at a temperature of 77 K [13], [28]. Although not stated explicitly by Lu et al [21], we can infer that the NEP of those Geon-Si devices was on the order of 3 × 10 −14 WHz −1/2 at λ = 1300 nm (from the quoted SPDE and DCR) at a higher temperature of 200 K. However, there still remains a performance gap between these results on Ge-containing SPADs and those for InGaAs/InP SPADs where NEPs of less than 1 × 10 −17 WHz −1/2 at λ = 1550 nm have been reported at a temperature of 193 K [6], [7].…”

“…Ge has good absorption properties at wavelengths up to ∼1600 nm at 300 K [12], and some work has been performed on all-Ge SPADs [13]. The high-field multiplication layer was necessarily of narrow-gap Ge, resulting in large DCRs due to band-to-band tunneling.…”

A gated single-photon avalanche diode array fabricated in a conventional CMOS process for triggered systems

“…The benefits of the gated operation with commercially available germanium [14] and InGaAs/InP [15] APDs for the detection of 1-1.3 m wavelengths have already been discussed in the literature. In these cases, short gate pulses are achieved with voltage generators.…”

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

“…INGLE-PHOTON counting and single-photon timing have become increasingly important in a number of applications such as time-resolved photoluminescence [1], optical time-domain reflectometry (OTDR) [2] and time-offlight laser ranging [3] and imaging. More recently they have been employed in quantum key distribution [4] and noninvasive testing of VLSI circuits [5].…”