Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Pellegrini, Sara; Warburton, R. J.; Tan, L.J.J.; Ng, Jo Shien; Krysa, A. B.; Groom, K. M.; David, J.P.R.; Cova, S.; Robertson, M.J.; Buller, Gerald S.

doi:10.1109/jqe.2006.871067

Cited by 133 publications

(83 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This design can be effectively implemented because the InP multiplication layer is transparent to the wavelengths of interest, namely 1550 and 1310 nm wavelength. To ease hole transport across the valence band offset between the InGaAs layer and the InP multiplication layer, an InGaAsP graded layer with a varying bandgap but all lattice-matched to InP is inserted between the InGaAs absorption region and InP multiplication region [54]. Without the InGaAsP graded layer, the quantum efficiency of the device will be much compromised.…”

Section: Design Criteriamentioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

View full text Add to dashboard Cite

While silicon single-photon avalanche diodes (SPAD) have reached very high detection efficiency and timing resolution, their use in fibre-optic communications, optical free space communications, and infrared sensing and imaging remains limited. III-V compounds including InGaAs and InP are the prevalent materials for 1550 nm light detection. However, even the most sensitive 1550 nm photoreceivers in optical communication have a sensitivity limit of a few hundred photons. Today, the only viable approach to achieve single-photon sensitivity at 1550 nm wavelength from semiconductor devices is to operate the avalanche detectors in Geiger mode, essentially trading dynamic range and speed for sensitivity. As material properties limit the performance of Ge and III-V detectors, new conceptual insight with regard to novel quenching and gain mechanisms could potentially address the performance limitations of III-V SPADs. Novel designs that utilise internal self-quenching and negative feedback can be used to harness the sensitivity of single-photon detectors, while drastically reducing the device complexity and increasing the level of integration. Incorporation of multiple gain mechanisms, together with self-quenching and built-in negative feedback, into a single device also hold promise for a new type of detector with single-photon sensitivity and large dynamic range.

show abstract

Section: Design Criteriamentioning

confidence: 99%

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Hall

Liu

2015

Nanophotonics

View full text Add to dashboard Cite

show abstract

“…Cross section of the proposed device: an InGaAs SPAD is directbonded to a Si SPAD for optical readout. IR photons are incident on the back surface of the InGaAs SPAD (e.g., [9], [11]). As carriers recombine during the avalanche, they release NIR and visible photons, which are detected by the silicon device (e.g.…”

Section: A Physics Of Hot-carrier Luminescencementioning

confidence: 99%

“…Solid-state IR SPADs have been demonstrated using a planar geometry and a standard semiconductor processing flow [9]. These detectors traditionally have separate absorption and multiplication regions, whereby, for example, photons are absorbed in a thick (several microns) lightly doped InGaAs layer.…”

Section: Introductionmentioning

confidence: 99%

“…Because thermal generation and tunneling increase as the bandgap decreases, it is necessary to cool IR SPAD, usually to about 200 K. At these temperatures, afterpulsing becomes the dominant noise source with rates in the order of tens of kilohertz, and it becomes the main bottleneck for device bandwidth [9]- [17]. Time gating can reduce the effect of afterpulsing [11]- [18], but due to its exponential time distribution, the separation between gates (device dead time) must be made long enough compared with the afterpulse lifetime, in order to sufficiently reduce the probability of experiencing an afterpulse during an exposure time gate.…”

Section: Introductionmentioning

confidence: 99%

“…The capacitance in IR SPADs is dominated by the capacitances of the readout, recharge, and quenching circuitry, because these operations are implemented off-chip, either on a board or on a silicon die. Connections are made either by wire bonding [9] or by using indium bumps [20]. This limits the pixel pitch, and may result in capacitances of the order of picofarads, thus, deteriorating the noise performance of the device due to afterpulsing.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

Finkelstein

Groß

et al. 2007

IEEE J. Select. Topics Quantum Electron.

View full text Add to dashboard Cite

Abstract-We propose and analyze a new method for singlephoton wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.Index Terms-Avalanche photodiodes, single photon detectors, wavelength upconversion.

show abstract

Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors

et al. 2018

View full text Add to dashboard Cite

Advanced complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array technology is progressing rapidly and is being deployed in a wide range of applications. We report for the first time the use of a complementary metal‐oxide semiconductor‐compatible single‐photon avalanche diode array to perform detailed optical measurements on pixels of an organic light‐emitting diode microdisplay at very high sampling rate, very low light level, and over a very wide dynamic range of luminance. This offers a clear demonstration of the huge potential of this single‐photon avalanche diode technology to reveal hitherto obscure details of the optical characteristics of individual and groups of organic light‐emitting diode pixels.

show abstract

Design and Performance of an InGaAs–InP Single-Photon Avalanche Diode Detector

Cited by 133 publications

References 25 publications

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Single photon avalanche detectors: prospects of new quenching and gain mechanisms

Analysis of Hot-Carrier Luminescence for Infrared Single-Photon Upconversion and Readout

Characterization of electronic displays using CMOS single‐photon avalanche diode image sensors

Contact Info

Product

Resources

About