Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.

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High-performance silicon nitride focusing grating couplers with AlCu/TiN reflectors for a visible wavelength (660 nm) have been designed and fabricated in a standard complementary metal-oxide-semiconductor pilot line. The influence of the bottom oxide cladding thickness on the grating decay length and efficiency is theoretically and experimentally investigated. It is shown how the metal reflector not only increases the efficiency but also allows reduction of the radiated beam size. Coupling efficiencies above 59% have been measured for compact focusing gratings.

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Single-photon avalanche diodes (SPADs) provide photons' time of arrival for various applications. In recent years, attempts have been made to miniaturize SPADs in order to facilitate large-array integration and in order to reduce the dead time of the device. We investigate the benefits and drawbacks of device miniaturization by characterizing a new fast SPAD in a commercial 0.18 microm complementary metal oxide semiconductor technology. The device employs a novel and efficient guard ring, resulting in a high fill factor. Thanks to its small size, the dead time is only 5 ns, resulting in the fastest reported SPAD to date. However, the short dead time is accompanied by a high after-pulsing rate, which we show to be a limiting parameter for SPAD miniaturization. We describe a new and compact active-recharge scheme which improves signal-to-noise tenfold compared with the passive configuration, using a fraction of the area of state-of-the-art active-recharge circuits, and without increasing the dead time. The performance of compact SPADs stands to benefit such applications as high-resolution fluorescence-lifetime imaging, active-illumination three-dimensional imagers, and quantum key distribution systems.

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Abstract-We propose and analyze a new method for singlephoton wavelength up-conversion using optical coupling between a primary infrared (IR) single-photon avalanche diode (SPAD) and a complementary metal oxide semiconductor (CMOS) silicon SPAD, which are fused through a silicon dioxide passivation layer. A primary IR photon induces an avalanche in the IR SPAD. The photons produced by hot-carrier recombination are subsequently sensed by the silicon SPAD, thus, allowing for on-die data processing. Because the devices are fused through their passivation layers, lattice mismatch issues between the semiconductor materials are avoided. We develop a model for calculating the conversion efficiency of the device, and use realistic device parameters to estimate up to 97% upconversion efficiency and 33% system efficiency, limited by the IR detector alone. The new scheme offers a low-cost means to manufacture dense IR-SPAD arrays, while significantly reducing their afterpulsing. We show that this high-speed compact method for upconverting IR photons is feasible and efficient.Index Terms-Avalanche photodiodes, single photon detectors, wavelength upconversion.