We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing a Si3N4 strain layer directly on top of the silicon waveguide the silicon crystal is asymmetrically distorted. Thus its inversion symmetry is broken and a linear electro-optic effect is induced. Electro-optic characterization yields a record high value χ(2)(yyz) = 122 pm/V for the second-order susceptibility of the strained silicon waveguide and a strict linear dependence between the applied modulation voltage V(mod) and the resulting effective index change Δn(eff). Spatially resolved micro-Raman and terahertz (THz) difference frequency generation (DFG) experiments provide in-depth insight into the origin of the electro-optic effect by correlating the local strain distribution with the observed second-order optical activity.

Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results for nanophotonic waveguides fabricated in a standard CMOS pilot line with losses below 0.71dB/cm in an aqueous environment and 0.51dB/cm with silicon dioxide cladding are reported. Design and characterization of waveguide bends, grating couplers and multimode interference couplers (MMI) at a wavelength of 660 nm are presented. The index contrast of this technology enables high integration densities with insertion losses below 0.05 dB per 90° bend for radii as small as 35 µm. By a proper design of the buried oxide layer thickness, grating couplers with efficiencies above 38% for the TE polarization have been obtained.

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Ring resonator modulators (RRM) combine extreme compactness, low power consumption and wavelength division multiplexing functionality, making them a frontrunner for addressing the scalability requirements of short distance optical links. To extend data rates beyond the classically assumed bandwidth capability, we derive and experimentally verify closed form equations of the electro-optic response and asymmetric side band generation resulting from inherent transient time dynamics and leverage these to significantly improve device performance. An equivalent circuit description with a commonly used peaking amplifier model allows straightforward assessment of the effect on existing communication system architectures. A small signal analytical expression of peaking in the electro-optic response of RRMs is derived and used to extend the electro-optic bandwidth of the device above 40 GHz as well as to open eye diagrams penalized by intersymbol interference at 32, 40 and 44 Gbps. Predicted peaking and asymmetric side band generation are in excellent agreement with experiments.

Three-dimensional (3D) nano-printing of freeform optical waveguides, also referred to as photonic wire bonding, allows for efficient coupling between photonic chips and can greatly simplify optical system assembly. As a key advantage, the shape and the trajectory of photonic wire bonds can be adapted to the mode-field profiles and the positions of the chips, thereby offering an attractive alternative to conventional optical assembly techniques that rely on technically complex and costly high-precision alignment. However, while the fundamental advantages of the photonic wire bonding concept have been shown in proof-of-concept experiments, it has so far been unclear whether the technique can also be leveraged for practically relevant use cases with stringent reproducibility and reliability requirements. In this paper, we demonstrate optical communication engines that rely on photonic wire bonding for connecting arrays of silicon photonic modulators to InP lasers and single-mode fibres. In a first experiment, we show an eight-channel transmitter offering an aggregate line rate of 448 Gbit/s by low-complexity intensity modulation. A second experiment is dedicated to a four-channel coherent transmitter, operating at a net data rate of 732.7 Gbit/sa record for coherent silicon photonic transmitters with co-packaged lasers. Using dedicated test chips, we further demonstrate automated mass production of photonic wire bonds with insertion losses of (0.7 ± 0.15) dB, and we show their resilience in environmental-stability tests and at high optical power. These results might form the basis for simplified assembly of advanced photonic multi-chip systems that combine the distinct advantages of different integration platforms.

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying on epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters with high modulation efficiency and comparatively low insertion losses. A high average phase shifter efficiency of VπL = 0.74 V⋅cm is reached between 0 V and 2 V reverse bias, while maintaining optical losses at 4.2 dB/mm and the intrinsic RC cutoff frequency at 48 GHz (both at 1 V reverse bias). The fabrication process, the sensitivity to fabrication tolerances, the phase shifter performance and examples of lumped element and travelling wave modulators are modeled in detail. Device linearity is shown to be sufficient to support complex modulation formats such as 16-QAM.

Percolation effects are studied in phase change materials used for optical and electrical nonvolatile memory applications. Simultaneous measurements of the electrical resistivity and optical reflectivity allow experimental assessment of the percolation behavior associated with the mixed amorphous and crystalline phases in this class of chalcogenide materials. Dynamic analysis of the isothermal amorphous to crystalline phase transition in as-deposited amorphous Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 thin films are performed. A significantly earlier onset and saturation for the change of electrical resistivity in comparison to the optically measured phase transition is observed. This behavior reflects a significant influence of percolation on the electrical properties of this class of materials, leading to a nonlinear relationship between crystallization degree and electrical resistivity. This nonlinearity is associated with the formation of highly conducting crystalline paths in a lower conducting amorphous matrix. The influence of percolation on optical properties is found to be negligible. The experimental results are quantitatively compared to Wiener bounds and Bruggeman percolation models. Substantial differences in the crystallization behavior of Ge2Sb2Te5 and Sn doped Ge2Sb2Te5 are observed: while heterogeneous nucleation induced by an interfacial layer resulting in layer-by-layer growth is observed for Ge2Sb2Te5, homogeneous nucleation and formation of prism shaped crystallites dominate in Sn doped Ge2Sb2Te5. The presented data represent the experimental analysis of percolation for the electrical resistivity in this class of materials, indicating the relevance of this effect for the adequate modeling and systematic optimization of future phase change random access memories and cognitive devices.

High-performance silicon nitride focusing grating couplers with AlCu/TiN reflectors for a visible wavelength (660 nm) have been designed and fabricated in a standard complementary metal-oxide-semiconductor pilot line. The influence of the bottom oxide cladding thickness on the grating decay length and efficiency is theoretically and experimentally investigated. It is shown how the metal reflector not only increases the efficiency but also allows reduction of the radiated beam size. Coupling efficiencies above 59% have been measured for compact focusing gratings.