Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Chen, Shih-Hui; Gong, Jeng; Wu, Meng‐Chyi; Huang, Tsung–Yi; Huang, J.S.T.; Liou, Ruey-Hsin; Hsu, S. L.; Lee, Li-Ling; Lee, Hung-chun

doi:10.1143/jjap.42.409

Cited by 5 publications

(2 citation statements)

References 1 publication

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“…For the device with a low NDD dosage, I d degradation increases with V gs . Such a trend indicates that damage is located in the NDD accumulation region, which is similar to the result reported by Chen et al 12) On the other hand, for the device with a high NDD dosage, I d degradation increases at the beginning, but decreases later, with V gs . Such a trend reveals that damage is located in both the accumulation and channel regions.…”

Section: Resultssupporting

confidence: 88%

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Chen

Lee

et al. 2007

jjap

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The hot-carrier reliability of 12 V high-voltage n-channel double diffused drain metal-oxide-semiconductor (DDDMOS) field-effect transistors with various n-type double diffusion (NDD) implant dosages is investigated. A high NDD implant dosage results in a high substrate current; however, on-resistance (R on ) degradation is low. The damage location shifting toward the channel is responsible for this unexpected low R on degradation. Technology computer-aided design (TCAD) simulation and charge pumping measurements are carried out to identify the damage location. Our analysis results reveal that an increase in NDD dosage is effective for improving the reliability of the DDDMOS field-effect transistors.

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Section: Resultssupporting

confidence: 88%

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Chen

Lee

et al. 2007

jjap

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“…The hot-carrier-induced damage in the N À drift region has more influence on series resistance increase. 8) Therefore, greater jÁI d =I d j as measured V g increased would be observed if the damage is mainly located in the N À drift region. As seen in Fig.…”

Section: Resultsmentioning

confidence: 97%

Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

Chen

et al. 2008

jjap

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The phenomenon and mechanism of hot-carrier-induced on-resistance (R on ) degradation for the n-type lateral diffused metaloxide-semiconductor (MOS) transistors stressed under various gate voltages (V g ) are investigated. R on degradation of the device is found to be attributed to the interface state (N it ) generation in the N À drift region. Moreover, R on degradation is almost identical for the devices stressed under medium V g and high V g , despite the fact that bulk current of the device is much greater at high V g bias. Such an anomalous R on degradation is suggested to be the result of two combined factors: the magnitude of impact ionization rate and N it generation efficiency.

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Two-stage hot-carrier degradation behavior of 0.18μm 18V n-type DEMOS and its recovery effect

Gao

Wang

et al. 2009

Microelectronics Reliability

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Time-Dependent Drain- and Source-Series Resistance of High-Voltage Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors during Hot-Carrier Stress

Cited by 5 publications

References 1 publication

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors

Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

Two-stage hot-carrier degradation behavior of 0.18μm 18V n-type DEMOS and its recovery effect

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