2015 IEEE Radiation Effects Data Workshop (REDW) 2015
DOI: 10.1109/redw.2015.7336739
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TID and SEE Characterization of Microsemi's 4th Generation Radiation Tolerant RTG4 Flash-Based FPGA

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Cited by 29 publications
(10 citation statements)
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“…13,37 The RTG4 FPGA manufactured by MicroSemi is a radiation tolerant FPGA released in 2015. The device has been tested up to 100s of krad(Si), 38 and is now used in standard spacecraft computing components. 39 In summaries collected in 2017 14 the RTG4 had the highest performance per watt for matrix multiply tasks of all processors considered.…”
Section: Current and Near-future Space Processorsmentioning
confidence: 99%
“…13,37 The RTG4 FPGA manufactured by MicroSemi is a radiation tolerant FPGA released in 2015. The device has been tested up to 100s of krad(Si), 38 and is now used in standard spacecraft computing components. 39 In summaries collected in 2017 14 the RTG4 had the highest performance per watt for matrix multiply tasks of all processors considered.…”
Section: Current and Near-future Space Processorsmentioning
confidence: 99%
“…• RTG4 FPGA from Microsemi, which can tolerate a TID up to 160 Krad [44]; • GR740 from CAES, which features the LEON4 microprocessor. This board can tolerate a TID of 300 Krad [45].…”
Section: Radiation Hardened Devicesmentioning
confidence: 99%
“…[92] reports the results of heavy ions and proton tests for SEE of an IGLOO2. "High current" status triggered by particles (suspected SEL) is reported (while, for instance, spacegrade RTG4 is SEL immune [93]). c) Space-grade SRAM-based (e.g., Xilinx Virtex 5QV): These devices are typically well characterized in terms of effects of radiation and provide meaningful improvements over COTS SRAM based (Ref.…”
Section: Hardware Modelsmentioning
confidence: 99%
“…This means that the same level of fault tolerance employed for ASICs can be considered enough. In [93] the tolerance to TID effect of the RTG4 is compared with the one of the SmartFusion2 and a significant improvement is found, with a TID tolerance tested up to 160 krad. No SELs were observed for an LET of 103 MeV ⋅ cm 2 ∕mg at 100°C, and the SER of the sequential elements (flip-flops with TMR) is at least three orders of magnitude better than the simple flip-flops in the SmartFusion2.…”
Section: Hardware Modelsmentioning
confidence: 99%