Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed

Abstract

With a high crystallization temperature of 211 °C, Ti10Sb60Te30 phase change material exhibits a data retention of 10-yr at 137 °C, which is much better than that of usual Ge2Sb2Te5. No other phase is formed in Ti10Sb60Te30 film except hexagonal Sb2Te phase. For Ti10Sb60Te30-based phase change memory cell, as short as 6 ns electric pulse can fulfill the Set operation, demonstrating an extremely rapid crystallization speed of Ti10Sb60Te30. The programming cycles can reach 2.2 × 104 with very short Set/Reset pulses of 100 ns/50 ns.

Atomic scale insight into the effects of Aluminum doped Sb2Te for phase change memory application

“…Here, the of ST and AST films are ~2.18 eV and ~2.68 eV, respectively. The estimated T d increases from ~55 °C (ST) to ~103 °C (AST) after Al doping, with the latter higher than that of GST (~85 °C), competent for consumer electronics application 25 .…”

Signatures of Ge2Sb2Te5 film at structural transitions

“…It is known that the BE of an element increases when it bonds with a higher electro negative element [29,30]. Therefore, an increased BE of Ge 2p after switching to the FCC structure indicates a bonding with a higher electronegative Te (2.10) or Sb (2.05).…”

Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

“…The core level spectra of Se 3d, Sb 3d and Te 3d are plotted in Fig. 6,30 The electronegativities of Se, Te, Sb and Ge are 2.55, 2.1, 2.05 and 2.01 respectively. The binding energy of Se 3d for Ge 4 Sb 52 Te 9 Se 35 results in a Sb-Se peak centered at 53.9 eV, 29 which is lower than the Se-Se homopolar binding energy of pure Se.…”