Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

Wang, Miao; Lu, Yegang; Shen, Xiang; Wang, Guoxiang; Li, Jun; Dai, Shixun; Song, Sannian; Zhang, Song

doi:10.1039/c5ce00656b

Cited by 17 publications

(12 citation statements)

References 32 publications

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“…With nitrogen doping, the binding energy of 54.12 eV for Se 3d increased by about 0.2 eV. Generally, the binding energy increases when the electronegativity of an adjacent atom increases . Since N (3.04) has a large electronegativity compared to Sb (2.05) and Se (2.55), both the Sb 3d and Se 3d spectra were shifted to higher binding energies with increasing nitrogen content.…”

Section: Resultsmentioning

confidence: 96%

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Park

Jeong

Choi

2016

Physica Status Solidi (a)

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Phone: þ82 2 2123 2852, Fax: þ82 2 312 5375In this paper, the crystallization behavior of nitrogen-doped SbSe films was investigated as a function of nitrogen content. We found that the SET resistance and crystallization temperature of nitrogen-doped SbSe films were higher than those of un-doped SbSe films. Moreover, the crystallinity and average grain area decreased with increasing nitrogen content because of the formation of nitrides, which disturbed crystal growth. Theoretical modeling was conducted to verify the effects of nitrogen doping, and the results were in good agreement with the experimental results. Through the optical band gap measurement, we found that nitrogen doping is an effective method for improving amorphous stability and reducing RESET current. In addition, the newly formed nitrides improved the chemical composition stability by suppressing element loss. After optimizing the nitrogen contents, nitrogen-doped SbSe films are expected to be promising materials for PCRAM applications.

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Section: Resultsmentioning

confidence: 96%

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Park

Jeong

Choi

2016

Physica Status Solidi (a)

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“…The main properties of a good phase-change material are: high-speed phase transition, long thermal stability of amorphous state, large optical change (for rewriteable optical storage) or large resistance change (for non-volatile electronic storage) between the two states, large cycle number of reversible transitions and high chemical stability 1 . Suitable materials for non-volatile memories have been identified in the past years [1][2][3][4][5][6] , being the Ge-Sb-Te system the most studied.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films

et al. 2019

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Nowadays, the Ge-Sb-Te system is studied extensively for use in the field of both electrical and optical non-volatile memories. The key of this application is based on the changes in the physical properties (electrical conductivity or refractive index) of these films as a result of structural transformation between amorphous and crystalline states. Both states are highly stable and it is relatively easy to change between them when they are prepared as thin films. In this work, structural and electrical behaviours with the temperature of thin films with compositions Ge 13 Sb 5 Te 82 , Ge 1 Sb 2 Te 4 , Ge 2 Sb 2 Te 5 , Ge 1 Sb 4 Te 7 and Sb 70 Te 30 (atomic fraction) were studied. Films were obtained by pulsed laser deposition (PLD) using a pulsed Nd:YAG laser (λ = 355 nm) and they were structurally characterized by X-ray diffraction. Temperature dependence of electrical resistance was studied for these films from room temperature to 520 K at a heating rate about 3 K/min. During crystallization, their electrical resistance falls several orders of magnitude in a narrow temperature range. The electrical conduction activation energies of the amorphous and crystalline states and the crystallization temperature were determined. The crystallization products were characterized by X-ray diffraction. The results were compared with those obtained by other authors.

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“…Figure a shows the relationship between temperature and electrical resistance at the heating rate of 50 °C/min. The resistance decreases continuously with increasing temperature for all samples due to the heat active carrier for hopping conduction . The occurrence of a phase transition from amorphous to crystalline can account for a sharp drop in resistance as the temperature reaches the crystallization temperature ( T c ).…”

Section: Resultsmentioning

confidence: 99%

“…With the development of the nonvolatile memories, phase-change memory (PCM) is widely considered to be one of the most promising candidates due to its low-power consumption, good scalability, and complementary metal-oxide-semiconductor (CMOS) compatibility. − As a functional layer of PCM, phase-change materials play a key role in performance of the device. For example, Ge 2 Sb 2 Te 5 (GST) is widely used for PCM due to its good overall performance.…”

Section: Introductionmentioning

confidence: 99%

Change in Crystallization Mechanism of Sb Film by Doping VO₂ for Ultraretention and High-Speed Phase-Change Memory

Zhang

2019

Crystal Growth & Design

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Pure Sb thin film has attracted great interest for phase-change memory owing to its appealing properties such as simple composition, fast crystallization, and sufficient electrical contrast between amorphous and crystalline states. However, its proneness to crystallization dominated by an explosive mechanism makes it challenging to achieve a stable amorphous state.Here we demonstrate a high thermal stability of amorphous Sb which is realized by combining with a VO 2 grid-frame structure to vary its crystallization mechanism. It is shown that the crystallization temperature and 10-year data retention increased with the increasing VO 2 concentration. A higher crystalline resistance for (VO 2 ) x Sb 100−x thin film was obtained due to the existence of the abundant Sb-VO 2 grain boundaries, which is beneficial to reduce the power consumption. The optical band gaps of both as-deposited and crystalline films increase with increasing VO 2 content. After the addition of VO 2 , the crystallization mechanism changes from explosive crystallization to a nucleation-dominated crystallization mechanism, which results in the improvement of thermal stability. These results pave the way for building a high-stability and high-speed phase-change memory based on simple composition.

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Effect of Sb₂Se on phase change characteristics of Ge₂Sb₂Te₅

Cited by 17 publications

References 32 publications

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films

Change in Crystallization Mechanism of Sb Film by Doping VO₂ for Ultraretention and High-Speed Phase-Change Memory

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Effect of Sb2Se on phase change characteristics of Ge2Sb2Te5

Cited by 17 publications

References 32 publications

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Study on the crystallization behavior of nitrogen‐doped SbSe films for PCRAM applications

Temperature Dependence of Electrical Resistance in Ge-Sb-Te Thin Films

Change in Crystallization Mechanism of Sb Film by Doping VO2 for Ultraretention and High-Speed Phase-Change Memory

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Product

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Effect of Sb₂Se on phase change characteristics of Ge₂Sb₂Te₅

Change in Crystallization Mechanism of Sb Film by Doping VO₂ for Ultraretention and High-Speed Phase-Change Memory