Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect (SHE) in 14 nm bulk nFinFETs with ambient temperature (T A ) from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/SiO 2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below: (i) not all input power (Q input ) turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport; (ii) a higher T A leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages; (iii) SHE can lead to serious degradation in the carrier transport, which will increase when T A increases; (iv) the current degradation can be 8.9% when V ds = 0.7 V, V gs = 1 V and T A = 400 K; (v) device thermal resistance (R th ) increases with increasing of T A , which is seriously impacted by the non-equilibrium transport. Hence, the impact of T A should be carefully considered when investigating SHE in nanoscale devices.

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“…HfO 2 /TiAlN is utilized as the high-k/metal-gate in nFinFET. The device parameters are listed in Table 1 [25,26] . Fig.…”

Section: Device Structure and Simulation Methodsmentioning

confidence: 99%

Impact of ambient temperature on the self-heating effects in FinFETs

Yin

Liu

2018

J. Semicond.

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“…The in-house three-dimensional full-band ensemble Monte Carlo simulator [22][23][24][25][26] is utilized in this work. The full band structure of silicon is employed, which is obtained by empirical pseudopotential calculation including spin-orbit interactions.…”

Section: Simulation Methods and Device Structurementioning

confidence: 99%

Investigation of thermal effects on FinFETs in the quasi-ballistic regime

Yin¹,

Shen²,

Di³

et al. 2018

Jpn. J. Appl. Phys.

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In this work, the thermal effects of FinFETs in the quasi-ballistic regime are investigated using the Monte Carlo method. Bulk Si nFinFETs with the same fin structure and two different gate lengths L g = 20 and 80 nm are investigated and compared to evaluate the thermal effects on the performance of FinFETs in the quasi-ballistic regime. The on current of the 20 nm FinFET with V gs = 0.7 V does not decrease with increasing lattice temperature (T L ) at a high V ds . The electrostatic properties in the 20 nm FinFET are more affected by T L than those in the 80 nm FinFET. However, the electron transport in the 20 nm FinFET is less affected by T L than that in the 80 nm FinFET. The electrostatic properties being more sensitive and the electron transport being less sensitive to thermal effects in the quasi-ballistic regime than in the diffusive regime should be considered for effective device modeling and design.

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