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We use an electro-thermal coupled Monte Carlo simulation framework to investigate the self-heating effect (SHE) in 14 nm bulk nFinFETs with ambient temperature (T A ) from 220 to 400 K. Based on this method, nonlocal heat generation can be achieved. Contact thermal resistances of Si/Metal and Si/SiO 2 are selected to ensure that the source and drain heat dissipation paths are the first two heat dissipation paths. The results are listed below: (i) not all input power (Q input ) turns into heat generation in the device region and some is taken out by the thermal non-equilibrium carriers, owing to the serious non-equilibrium transport; (ii) a higher T A leads to a larger ratio of input power turning into heat generation in the device region at the same operating voltages; (iii) SHE can lead to serious degradation in the carrier transport, which will increase when T A increases; (iv) the current degradation can be 8.9% when V ds = 0.7 V, V gs = 1 V and T A = 400 K; (v) device thermal resistance (R th ) increases with increasing of T A , which is seriously impacted by the non-equilibrium transport. Hence, the impact of T A should be carefully considered when investigating SHE in nanoscale devices.