1991
DOI: 10.1016/0040-6090(91)90196-5
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Thin resistive film with temperature coefficient of resistance close to zero

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Cited by 23 publications
(7 citation statements)
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“…These two kinds of alloy targets were prepared by powder metallurgy, the size of which was 382 mm × 128 mm × 14 mm. Metal Ni, like other metals such as Al, Ti, Ta and Zr, is mainly used to improve the performance of Cr-Si resistive films [17][18][19][20] in discrete resistors and hybrid integrated circuit application.…”
Section: The Preparation Of Cr-si and Cr-si-ni Thin Film Resistorsmentioning
confidence: 99%
“…These two kinds of alloy targets were prepared by powder metallurgy, the size of which was 382 mm × 128 mm × 14 mm. Metal Ni, like other metals such as Al, Ti, Ta and Zr, is mainly used to improve the performance of Cr-Si resistive films [17][18][19][20] in discrete resistors and hybrid integrated circuit application.…”
Section: The Preparation Of Cr-si and Cr-si-ni Thin Film Resistorsmentioning
confidence: 99%
“…We chose to work with Ni-Cr because it is reported to have a better stability compared to TaN [1]. Moreover, TaN exhibits a range of low to high negative TCR [2] values, whereas films with near-zero TCR are reported for Ni-Cr [3]. Much work has been published on Ni-Cr films in discrete resistors [4,5].…”
Section: Introductionmentioning
confidence: 98%
“…Recently, there has been much interest in the field of PBG [1,2], and several novel microwave PBG structures have been proposed [3,4]. Among those, a uniplanar compact photonic bandgap (UC-PBG) structure [3] is of particular interest because of its easy integration and low cost.…”
Section: Introductionmentioning
confidence: 99%
“…Among those, a uniplanar compact photonic bandgap (UC-PBG) structure [3] is of particular interest because of its easy integration and low cost. It has been successfully applied to various applications such as broadband low-pass filters; harmonictuned power amplifiers, and so on [4,7].…”
Section: Introductionmentioning
confidence: 99%
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