Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

Vinayak, Seema; Vyas, H. P.; Muraleedharan, K.; Vankar, V. D.

doi:10.1016/j.tsf.2006.02.025

Cited by 36 publications

(21 citation statements)

References 11 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity decreased from 5.902 Â 10 À4 to 2.856 Â 10 À4 ohm.cm, when the annealing temperature increased from 250 to 350°C, then increased to 5.513 Â 10 À4 ohm.cm as the annealing temperature reached to 400°C. The decreasing of resistivity after annealing in N 2 from 200 to 350°C might be due to the decreasing defects and increasing in crystallite size of Ni-Cr thin films, which weakened the dispersion of electrons [5,10]. And the resistivity increasing after annealing at 400°C might be mainly resulted from the surface oxidation of the ETFR [16].…”

Section: Resultsmentioning

confidence: 99%

“…Ni-Cr alloy on the above mentioned substrates has been widely used as sensor or chip resistor for common integrated circuit [5,[10][11][12][13]. However few studies have been reported about depositing Ni-Cr alloy on copper foil as ETFR materials and investigating on the changes in thin film properties according to different annealing treatments.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Lai

Zeng

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Lai

Zeng

et al. 2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…9(a)) for [001] growth; GaSb on GaAs experiences compressive strain and the strain relaxation results in the misfit dislocations (MDs). Generation of 60° MDs (dislocation line direction and its Burgers vector are at 60°, viz., for (001) growth, the dislocation having line direction of [1][2][3][4][5][6][7][8][9][10] and Burgers vector ½[101] or ½[01-1]) creates threading dislocations (TDs), which degrade the overgrown device layers. Hence, it is important to restrict them.…”

mentioning

confidence: 99%

Microstructural and Compositional Characterisation of Electronic Materials

et al. 2016

Self Cite

View full text Add to dashboard Cite

Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT) and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, in-situ SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented. Keywords:Electronic materials, semiconductor electronic device, nanowires, infrared device structure REVIEW ARTICLE DEf. SCI. J., VOl. 66, NO. 4, July 2016 342 techniques for quantitative lattice distortion studies in III-V thin films & polarity of GaN based films 5,6 (e) quantitative strain/compositional studies of epitaxial thin films by the digital analysis of HRTEM images 7(f) quantitative analysis of heterointerfaces by atomic-column ratio mapping (g) in-situ SEM studies, and (h) compositional analysis by EDS and EELS techniques.An overview of GaAs, GaSb and GaN multilayer semiconductor device structures and the application of advanced electron microscopy techniques to study various issues in these materials development programs are presented. GaAs HEMt dEVIcE StructurESHEMT is a field effect transistor in which the channel is a quantum well (QW) realised by embedding a narrow bandgap semiconductor (such as InGaAs) between two wide bandgap semiconductors (e.g., GaAs and AlGaAs) and the carriers (two-dimension electron gas, 2DEG) in channel are populated by modulation doping.GaAs devices are made as pHEMTs (pseudomorphic HEMTs) and mHEMTs (metamorphic HEMTs). The schematics of these devices are shown as Fig. 1. It is to note that the increase of indium content in the In x Ga 1-x As channel enhances the saturation velocity and mobility of carriers, hence for given HEMT device features (for example, gate length), mHEMT has highest f T (the gain of the device is measured as a function of frequency, it decreases with frequency and reaches to unity at f T ), which is desirable for the device applications.grading by varying the indium content. In this case, misfit dislocations can originate and propagate as threading dislocations in the overgrown epilayers, if...

show abstract

“…Thus sheet resistances of <1 Ω/□ can be sputtered at a pressure of 1 mTorr using a 22 cathode power of 1000 W [7]. Following heat treatment at 450 °C in an air 23 atmosphere for 5 hours the negative as-grown TCR property of the films was shifted 24 to near zero. The aim of this work is to further investigate the effect of sputtering and 25 annealing process parameters on the structural and electrical properties of the 1 CuAlMo films.…”

mentioning

confidence: 99%

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

et al. 2013

View full text Add to dashboard Cite

show abstract

Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

Cited by 36 publications

References 11 publications

Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Annealing effect on the electrical properties and microstructure of embedded Ni–Cr thin film resistor

Microstructural and Compositional Characterisation of Electronic Materials

Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

Contact Info

Product

Resources

About