Structural and electrical properties of CuAlMo thin films prepared by magnetron sputtering

Abstract

11The structure and electrical properties of a novel low resistivity CuAlMo thin film 12 resistor material were investigated. The thin films were grown on Al 2 O 3 and glass

Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

“…The ternary system of copper-aluminium-molybdenum (CuAlMo) has recently been 2 reported to show promise in the preparation of thin film resistive materials due to its 3 excellent long-term stability and low temperature coefficient of resistance [1][2][3]. Work 4 to date on this metal alloy has focussed on studying the effect of varying deposition 5 process conditions on structural and electrical properties and relating them to 6 fundamental theories regarding the condensation mechanism of the thin films onto 7 the substrate.…”

Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

“…Thin-film resistors are used extensively in electronic circuits due to their high accuracy and excellent long term stability. So far, there are various specific materials currently used as thin-film resistors in ICs’ applications, such as Cr–Si–Ta–Al [ 3 ], Ti–Si–V–N [ 4 ], and CuAlMo [ 5 ], respectively. One of the most widely used thin-film resistors is nickel–hromium (NiCr) which has a low temperature coefficient of resistance (abbreviated as TCR) between −50 ppm/°C and +50 ppm/°C [ 6 , 7 ] and has a wide sheet resistance range of 10 to 500 Ω/square [ 8 ].…”