Electrical resistivity of CuAlMo thin films grown at room temperature by dc magnetron sputtering

Birkett, Martin; Penlington, Roger

doi:10.1088/2053-1591/3/7/075021

Cited by 3 publications

(1 citation statement)

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“…The idea of an additional grain-boundary scattering contribution to the Fuchs-Sondheimer scattering model was already implemented under the Mayadas-Shatzkes model [41] for the description of the thin film resistivity. The shortcomings of the Fuchs-Sondheimer model to describe experimental data and the many experimental validations of the MS-model proved the dominant character of grain-boundary scattering [41,50,60,61]. Later on, Deschacht et al [62] elaborated a similar analytical model for the description of the thermoelectric power of polycrystalline semimetal films taking into account the effects of grain boundaries.…”

Section: Role Of Layer Thicknessmentioning

confidence: 99%

The Seebeck Coefficient of Sputter Deposited Metallic Thin Films: The Role of Process Conditions

Cougnon

Depla

2019

Coatings

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Because of their reduced dimensions and mass, thin film thermocouples are a promising candidate for embedded sensors in composite materials, especially for application in lightweight and smart structures. The sensitivity of the thin film thermocouple depends however on the process conditions during deposition. In this work, the influence of the discharge current and residual gas impurities on the Seebeck coefficient is experimentally investigated for sputter deposited copper and constantan thin films. The influence of the layer thickness on the film Seebeck coefficient is also discussed. Our observations indicate that both a decreasing discharge current or an increasing background pressure results in a growing deviation of the film Seebeck coefficient compared to its bulk value. Variations in discharge current or background pressure are linked as they both induce a variation in the ratio between the impurity flux to metal flux towards the growing film. This latter parameter is considered a quantitative measure for the background residual gas incorporation in the film and is known to act as a grain refiner. The observed results emphasize the importance of the domain size on the Seebeck coefficient of metallic thin films.

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