Effect of Annealing Process on the Properties of Ni(55%)Cr(40%)Si(5%) Thin-Film Resistors

Abstract

Resistors in integrated circuits (ICs) are implemented using diffused methods fabricated in the base and emitter regions of bipolar transistor or in source/drain regions of CMOS. Deposition of thin films on the wafer surface is another choice to fabricate the thin-film resistors in ICs’ applications. In this study, Ni(55%)Cr(40%)Si(5%) (abbreviated as NiCrSi) in wt % was used as the target and the sputtering method was used to deposit the thin-film resistors on Al2O3 substrates. NiCrSi thin-film resistors with different thicknesses of 30.8 nm~334.7 nm were obtained by controlling deposition time. After deposition, the thin-film resistors were annealed at 400 °C under different durations in N2 atmosphere using the rapid thermal annealing (RTA) process. The sheet resistance of NiCrSi thin-film resistors was measured using the four-point-probe method from 25 °C to 125 °C, then the temperature coefficient of resistance could be obtained. We aim to show that resistivity of NiCrSi thin-film resistors decreased with increasing deposition time (thickness) and the annealing process had apparent effect on the sheet resistance and temperature coefficient of resistance. We also aim to show that the annealed NiCrSi thin-film resistors had a low temperature coefficient of resistance (TCR) between 0 ppm/°C and +50 ppm/°C.

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

“…Coatings 2019, 9, x FOR PEER REVIEW 9 of 12 scattering and oxides generation [24]. However, we hypothesize that the generation of oxides plays an important role in determining the electrical properties of Cu-Mn-Dy films.…”

“…Generally speaking, the resistivity of alloy film increases with an increase in the annealing temperature because the grain boundaries, crystal defects and oxides generation are increased after annealing [3]. Nevertheless, many scattering behaviors are believed to affect the resistivity of Cu-Mn-Dy films, which includes surface scattering, grain boundaries scattering, rough surfaces scattering, impurities scattering and oxides generation [24]. However, we hypothesize that the generation of oxides plays an important role in determining the electrical properties of Cu-Mn-Dy films.…”

Fabrication process and variation rule of electrical properties of CrSi thin film resistors

“…Among them, CrSi film is widely used because of its adjustable square resistance [1] (about 0.1~2 Kohm/square), good stability, high precision and easy integration. However, its manufacturing process and electrical parameter variation propensity have not yet been thoroughly and methodically discussed, although many great study findings have been made in the field of CrSi thin film resistors [2][3][4][5].…”

The Effect of Sensor Dimensions on the Performance of Flexible Hot Film Shear Stress Sensors

“…Performance of the flexible hot film sensor, especially the frequency response, is degraded from that of the hot wire [7]. There are many factors influencing the performance of flexible hot film shear stress sensors, such as thermistor and substrate properties [5,8,9] and annealing treatment [6,10]. Sensor size also has an effect on the performance of the shear stress sensor [11].…”