A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Lee, Ho-Yun; He, Chi-Wei; Lee, Ying-Chieh; Wu, Da-Chuan

doi:10.3390/coatings9020118

Cited by 4 publications

(4 citation statements)

References 23 publications

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“…e DC resistance of the strips was measured using a digital multimeter (HP 34401A) at different temperatures (25°C and 125°C). e thin-film TCR was measured using the following equation [11]:…”

Section: Discussionmentioning

confidence: 99%

“…Lee et al studied the electrical properties of Cu-Mn films with different amounts of Dy addition. Cu-Mn films with 40 at.% Dy addition that were annealed at 300°C exhibited a resistivity of ∼2100 μΩ-cm with the smallest temperature coefficient of resistance (− 85 ppm/°C) [11]. Yttrium was chosen as the dopant in the current work because of its high melting point (1526°C) and thermal stability, which may be advantageous for resistive thin film thermal stability.…”

Section: Introductionmentioning

confidence: 99%

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The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Lee

2019

Advances in Materials Science and Engineering

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In this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnYresistive thin films were deposited onto glass and Al 2 O 3 substrates. e electrical properties and microstructures of CuMn alloy films with different yttrium content were investigated. e CuMnY films were annealed at temperature ranging from 250°C to 350°C in N 2 atmosphere. e phase variation, microstructure, film thickness, and constitutional analysis of CuMnY films were characterized using X-ray diffraction, field emission scanning, and high-resolution transmission electron microscopy and related energy dispersive X-ray analyses (XRD, FESEM, and HRTEM/EDX). It was found that CuMnY alloy films separated into two parts after annealing. e first part is the MnO phase on the bottom side of the film. e second part is an amorphous structure on the upper side of the film. e MnO phase is a microcrystalline that exists in CuMn films, which is dependent on the Y content and annealing temperature. CuMn alloy films with 15.7% yttrium addition annealed at 300°C exhibited higher resistivity ∼4000 μΩ-cm with − 41 ppm/°C of temperature coefficient of resistance (TCR).

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Lee

2019

Advances in Materials Science and Engineering

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“…Zou et al found that the purification of rare earth La in Cu–TiB 2 composite helps to remove excess solution atoms, thus significantly improving the conductivity of the composite [ 24 ]. Lee et al studied the influence of Dy addition on the electrical properties and microstructure of annealed Cu–Mn alloy film and found that Dy addition can inhibit the formation of MnO and improve the resistivity of Cu–Mn film [ 25 ]. Zhang et al studied the influence of Ce on the microstructure and mechanical properties of pure copper and found that the addition of trace Ce purified the grain interface, refined the structure, removed impurities and slag, and thus improved the ductility of pure copper [ 26 ].…”

Section: Influence Mechanismmentioning

confidence: 99%

Research Progress in Interfacial Characteristics and Strengthening Mechanisms of Rare Earth Metal Oxide-Reinforced Copper Matrix Composites

Jiang

2022

Materials

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The existence of a small amount of rare earth metal oxides (REMOs) can greatly affect the structure and function of copper matrix composites owing to improvement of surface and interface properties between REMOs and metal matrix, and there are still some challenges concerning interfaces and complex interfacial reactions. This review summarizes the interfacial characteristics and strengthening mechanisms of REMO-reinforced copper matrix composites, including fabrication methods for solving rare earth metal oxide-dispersion problems and characterization of the microstructure and properties of REMO-reinforced copper matrix composites. In particular, the strengthening effects of various rare earth metal oxide-reinforced copper matrix composites are systematically summarized. The interface characteristics of composites from a thermodynamics standpoint and the strengthening mechanism are emphatically investigated and discussed in order to help unveil design principles and to provide reference for future research of REMO-reinforced copper matrix composites.

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“…Suitable trisodium citrate can inhibit the formation of Cu 2 O because the citrate ions can complex oxygen ions [31]. However, no Mn and Mn oxides peaks appeared, suggesting that the Mn segregation may too low to be detected in the as-deposited state [32]. Figure 6 presents the XRD patterns of the Cu(Mn) films that were deposited at their respective terminated OCP times during the Cu-SLRR.…”

Section: Ocp (S)mentioning

confidence: 99%

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

et al. 2020

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A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

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A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Cited by 4 publications

References 23 publications

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films

Research Progress in Interfacial Characteristics and Strengthening Mechanisms of Rare Earth Metal Oxide-Reinforced Copper Matrix Composites

A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

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