RF parameter extraction of MMIC nichrome resistors

Sharma, Renu; Vinayak, Seema; Rawal, D. S.; Kumar, Ashok; Ray, U. C.

doi:10.1002/mop.11233

Cited by 17 publications

(5 citation statements)

References 2 publications

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“…This is primarily because their values and performance are determined by the fabrication process rather than design equations. The equivalent circuit models for Rsh used in this study are those proposed by S. Renu et al [11], which incorporate a series inductance denoted by LS due to the NiCr's length. Additionally, L. Wang et al [12] reported an equivalent circuit for the MIM capacitance, which includes the prime lumped component and the inductances of the top and bottom metals.…”

Section: B Modelling Of Passive Componentsmentioning

confidence: 99%

Developoment of 100 GHz resonant tunnelling diodes based oscillator

AlQurashi¹,

sexton²,

Missous³

2022

Preprint

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In this work, the physical and electromagnetic modelling of a double barriers InGaAs/AlAs resonant tunnelling diode (RTD) oscillator was performed using a 4 μm2 mesa area diode with a peak current density of 3.3 mA/μm2 integrated with a coplanar waveguide resonator. A 100 GHz oscillator was realized with an output power of 83 μW by utilizing the diode's negative differential resistance feature. The equivalent circuit model of the diode was extracted using a fitting model for the RTD's measured I-V characteristics. Advanced design system (ADS) software was used to model the circuits. To ensure the circuit's performance at 100 GHz, all parasitic elements associated with the passive components were considered and modelled. Additionally, the stabilizing resistance's effect on the extracted power was discussed.

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Section: B Modelling Of Passive Componentsmentioning

confidence: 99%

Developoment of 100 GHz resonant tunnelling diodes based oscillator

AlQurashi¹,

sexton²,

Missous³

2022

Preprint

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show abstract

“…Therefore, the equivalent circuits were verified and experimental validated using fitting approaches with the S-parameters data to extract of RF parameters. The equivalent circuit module of the resistors and spiral inductor realized here is similar to the one reported in [30][31][32]. Because of their rather low temperature coefficient of resistance compared with semiconductor active layer resistors, thin film resistive metals are preferred for use in MMIC applications [33].…”

Section: Passive Elementsmentioning

confidence: 99%

Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Muttlak

Kostakis²,

Abdulwahid

et al. 2019

IET Optoelectronics

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A detailed study of the performance analysis of a low cost PIN/HBT optoelectronic integrated circuit is described. Measured and of 54 and 57GHz for 10×10µm 2 HBTs were achieved for such a large emitter size. The base and collector regions of the transistor were utilized to form a PIN photodiode which has a dc responsivity and quantum efficiency of 0.5 A/W and 0.45 respectively without antireflection coating at a wavelength of 1.55µm. For both active devices, a model was realized taking all parasitic and physical-based impacts into account, for example equivalent circuit of the pads surrounding the devices and transit delay time across the collector depletion region. The simulation results of the discrete passive and active elements showed good agreement with experimental measurements. The OEIC module was implemented in Keysight-advanced design system software with a three stage preamplifier which has a transimpedance gain of 40dBΩ and a-3dB bandwidth of 18GHz. This corresponds to a transimpedance-gain product of 1.8THz. A series peaking inductor technique was used in the design, contributing to an enhancement in the opto-electrical bandwidth of >60%. The optical/electrical response offers a bandwidth of ~15GHz, adequate for up to 20 Gb/s data rate operation.

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“…Ni-Cr resistors offer specific points of interest for applications with extraordinary demand for high stability as well as low TCR-like chosen circuits for measuring hardware, information handling, media transmission, etc [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. In GaAs monolithic microwave integrated circuits (MMICs), thin film metal resistors are promptly superseding semiconductor resistors where the resistive medium is a mesa etched or an ion implanted GaAs active layer.…”

Section: Introductionmentioning

confidence: 99%

“…In GaAs monolithic microwave integrated circuits (MMICs), thin film metal resistors are promptly superseding semiconductor resistors where the resistive medium is a mesa etched or an ion implanted GaAs active layer. The metal film should have high thermal resistance, low TCR to be utilize as a resistive material in MMIC [1][2][3][4][5][6]. Ni-Cr is a significant competitor metal films for GaAs MMICs as it has very well material consistency with MMIC fabrication.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of thin film Ni–Cr resistors on MMICs

Alim

Rezazadeh

Kyabaggu

et al. 2020

Semicond. Sci. Technol.

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This paper investigates the design, fabrication, testing of Ni-Cr based thin film resistors (TFRs) with 80:20 ratio is fabricated on a 2 inch GaAs wafer for monolithic microwave integrated circuits (MMICs) applications. For the purpose of assessing the Ni-Cr TFRs performance in 3D MMICs, five resistors having size of 0.5, 1, 2, 4 and 8 squares and thickness of 30 nm each from five distinctive groups were measured. All the TFRs are measured with and without polyimide on top of these resistors. The TFRs with polyimide exhibits a minor increase in resistance value which is possibly due to the oxidation process during the curing of two layers of polyimides. On the other hand, great temperature solidness has been watched over the temperature examined and a greatest TCR of 60 ppm C −1 is achieved from room temperature to 150 °C.

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RF parameter extraction of MMIC nichrome resistors

Cited by 17 publications

References 2 publications

Developoment of 100 GHz resonant tunnelling diodes based oscillator

Developoment of 100 GHz resonant tunnelling diodes based oscillator

Low‐cost InP–InGaAs PIN–HBT‐based OEIC for up to 20 Gb/s optical communication systems

Fabrication and characterization of thin film Ni–Cr resistors on MMICs

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