Thin Film Texture of Layered Molybdenum Disulphide for Photovoltaic Cells

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

“…The estimated values of the band gaps are 1.69 eV (360 °C), 1.72 eV (380 °C), 1.74 eV (400 °C) and 1.79 eV (450 °C). This falls between the values of the band gaps reported for molybdenum sulphide thin films [1][2][3][4]16]. It is obvious that the band gap depends on the deposition temperature of the thin film.…”

“…The I-V characteristics of each film were measured two to three times with current and voltage point swapped in each setting in order to minimize error. The average of the current and voltage values were then taken and the sheet resistance Rs of the films was calculated using the expression [20]: (3) This was then multiplied with the thickness values from RBS to obtain the resistivity of the films. The conductivity was then obtained by finding the reciprocal of the resistivity.…”

“…Molybdenum sulphide is a technologically important transition metal chalcogenide material which has drawn considerable attention as functional materials for many important applications such as solar cells [1,2], photovoltaic cells [3,4], field emitters [5,6], thermoelectric materials [7], catalyst in electrochromic devices [8], and so on. It also exhibits a strong degree of anisotropy in their properties.…”

“…Some of these techniques are purely physical such as sputtering [3,9,10], or purely chemical such as chemical vapor deposition (CVD) [11][12][13], while considerable number combines both physical and chemical reactions [14]. However, to achieve good optical performance as well as high DA VID PUBLISHING D stability lasting a long time, there is need for low cost preparation technique capable of producing molybdenum sulphide thin films with required microstructure and ultimately properties.…”

MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

“…Photovoltaic applications of these materials have been suggested and encouraging results were obtained. However, Jamieson and Jakovidis (2004) [12] proposed that the MoS 2 thin films must be textured for an efficient heterojunction photovoltaic cell. Ponomarev et al (1998) [13] on the other hand concluded that MoS 2 thin films are photoactive in which photoconductivity measurements reveal a direct band gap of 1.71 eV with Van der Waals planes parallel to substrate.…”