MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

Olofinjana, Bolutife; Egharevba, Gabriel O.; Taleatu, Bidini A.; Akinwunmi, Olumide Oluwole; Ajayi, E. O. B.

doi:10.4236/jmp.2011.25042

Cited by 14 publications

(16 citation statements)

References 44 publications

(67 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has also been reported earlier in another paper that the ratio was approximately 2:1 at deposition temperature of 420 °C [15]. The deposition temperature also controls the thickness of the films.…”

Section: Compositional Studiessupporting

confidence: 73%

“…The growth of molybdenum sulphide from a single solid source precursor using MOCVD at deposition temperature of 420 °C has been previously demonstrated [15]. However, in this present study, the effect of deposition temperature (while other parameters are kept constant) on the stoichiometry, morphology, roughness as well as the electrical and optical properties of molybdenum sulphide thin films deposited by MOCVD technique using a single solid source precursor has been investigated.…”

Section: Introductionmentioning

confidence: 87%

“…The precursor preparation and the deposition procedure have been reported earlier [15]. The substrates used are sodalime glass slides with composition O, Si, Na, Ca, Mg, Al = 60, 25, 10, 3, 1, 1, stainless steel sheet AISI304L and silicon wafer.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Olofinjana

Egharevba²,

Taleatu³

et al. 2014

JMSE-B

View full text Add to dashboard Cite

Molybdenum sulphide thin films were deposited on sodalime glass, silicon wafer and stainless steel (AISI 304L) substrates using Metal Organic Chemical Vapour Deposition (MOCVD) technique at temperatures ranging from 360 o C to 450 o C. The films were characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). Elemental analysis showed that the S/Mo ratio increases from 1.22 to 2.33 with increasing temperature. The optical band gap varies from 1.69 eV to 1.79 eV as deposition temperature increases. The electrical conductivity ranging from 0.5 Ω -1 cm -1 to 1.30 Ω -1 cm -1 also depends on deposition temperature. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that increases from 1.6 µm to 2.4 µm as the deposition temperature increases. This study demonstrates that the properties of the films depend on the deposition temperature.

show abstract

Section: Compositional Studiessupporting

confidence: 73%

Section: Introductionmentioning

confidence: 87%

See 1 more Smart Citation

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Olofinjana

Egharevba²,

Taleatu³

et al. 2014

JMSE-B

View full text Add to dashboard Cite

show abstract

“…1. The MOCVD setup is a locally adapted design that had been used in previous studies [28][29][30][31][32][33][34]. It is simple, cost effective, and suitable for large-scale production of various thin films for different applications.…”

Section: Methodsmentioning

confidence: 99%

Tribological behavior of N-doped ZnO thin films by metal organic chemical vapor deposition under lubricated contacts

et al. 2017

Self Cite

View full text Add to dashboard Cite

N-doped ZnO thin films were deposited on 304L stainless steel through the pyrolysis of zinc acetate and ammonium acetate in different ratios at a temperature of 420 °C using metal organic chemical vapor deposition. Compositional and structural analyzes of the films were performed by using Rutherford backscattering spectroscopy and X-ray diffraction. The frictional behavior of the thin films and 304L stainless steel substrate was evaluated using a ball-on-flat configuration with reciprocating sliding under marginally lubricated and fully flooded conditions. Al alloy (2017) was used as ball counterface, while basestock synthetic polyalfaolefin oil (PAO10) without additives was used as lubricant. The flat and ball counterface surfaces were examined to assess the wear dimension and failure mechanism. Under marginally lubricated condition, N-doped ZnO thin films provided significant reduction in friction, whereas the films have minimal or no effect in friction under fully flooded condition. N-doped ZnO thin films showed a significant effect in protecting the ball counterface as wear volume was reduced compared with that of the substrate under the marginally lubricated condition. Under the fully flooded condition, with the exception of one of the films, the wear volume of the N-doped ZnO thin films ball reduced compared with that of the substrate. In all the ball counterfaces for N-doped ZnO thin films under both conditions, wear occurred through abrasive mechanism of various degrees or mild polishing. Thus, superfluous lubrication of N-doped ZnO thin films is not necessary to reduce friction and wear.

show abstract

“…More recently, 2D materials have been explored as copper diffusion barriers in CMOS interconnect structures [12][13][14][15]. Furthermore, to enable the use of 2D materials in technology applications, processes have been developed to grow 2D materials via chemical vapour deposition (CVD) [16,17] and atomic layer deposition (ALD) [18,19]. The films prepared via thin film deposition were comparable in performance to materials obtained via exfoliation.…”

Section: Introductionmentioning

confidence: 99%

DFT calculations of the structure and stability of copper clusters on MoS₂

Nies

Nolan

2020

Beilstein J. Nanotechnol.

View full text Add to dashboard Cite

Layered materials, such as MoS2, are being intensely studied due to their interesting properties and wide variety of potential applications. These materials are also interesting as supports for low-dimensional metals for catalysis, while recent work has shown increased interest in using 2D materials in the electronics industry as a Cu diffusion barrier in semiconductor device interconnects. The interaction between different metal structures and MoS2 monolayers is therefore of significant importance and first-principles simulations can probe aspects of this interaction not easily accessible to experiment. Previous theoretical studies have focused particularly on the adsorption of a range of metallic elements, including first-row transition metals, as well as Ag and Au. However, most studies have examined single-atom adsorption or adsorbed nanoparticles of noble metals. This means there is a knowledge gap in terms of thin film nucleation on 2D materials. To begin addressing this issue, we present in this paper a first-principles density functional theory (DFT) study of the adsorption of small Cu n (n = 1–4) structures on 2D MoS2 as a model system. We find on a perfect MoS2 monolayer that a single Cu atom prefers an adsorption site above the Mo atom. With increasing nanocluster size the nanocluster binds more strongly when Cu atoms adsorb atop the S atoms. Stability is driven by the number of Cu–Cu interactions and the distance between adsorption sites, with no obvious preference towards 2D or 3D structures. The introduction of a single S vacancy in the monolayer enhances the copper binding energy, although some Cu n nanoclusters are actually unstable. The effect of the vacancy is localised around the vacancy site. Finally, on both the pristine and the defective MoS2 monolayer, the density-of-states analysis shows that the adsorption of Cu introduces new electronic states as a result of partial Cu oxidation, but the metallic character of Cu nanoclusters is preserved.

show abstract

MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

Cited by 14 publications

References 44 publications

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Tribological behavior of N-doped ZnO thin films by metal organic chemical vapor deposition under lubricated contacts

DFT calculations of the structure and stability of copper clusters on MoS₂

Contact Info

Product

Resources

About

MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

Cited by 14 publications

References 44 publications

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films

Tribological behavior of N-doped ZnO thin films by metal organic chemical vapor deposition under lubricated contacts

DFT calculations of the structure and stability of copper clusters on MoS2

Contact Info

Product

Resources

About

DFT calculations of the structure and stability of copper clusters on MoS₂