Few-Layer MoS₂: A Promising Layered Semiconductor

Abstract

Due to the recent expanding interest in two-dimensional layered materials, molybdenum disulfide (MoS2) has been receiving much research attention. Having an ultrathin layered structure and an appreciable direct band gap of 1.9 eV in the monolayer regime, few-layer MoS2 has good potential applications in nanoelectronics, optoelectronics, and flexible devices. In addition, the capability of controlling spin and valley degrees of freedom makes it a promising material for spintronic and valleytronic devices. In this review, we attempt to provide an overview of the research relevant to the structural and physical properties, fabrication methods, and electronic devices of few-layer MoS2. Recent developments and advances in studying the material are highlighted.

Structural, mechanical and electronic properties of in-plane 1T/2H phase interface of MoS2 heterostructures

“…[1][2][3][4][5][6][7][8] Depending on the arrangement of its S atoms, monolayer MoS 2 appears in many distinct phases, two of them are more popular and exhibits substantially different electronic structures: 2H (trigonal prismatic, D 3h ) MoS 2 is a semiconductor with a finite band gap between the filled d z 2 and empty d x 2 − d y 2 ,xy bands, and 1T (octahedral geometry, O h ) phase is metallic with Fermi level lying in the middle of degenerate d xy,yz,xz single band. 9 It has been recently demonstrated that the reversible transition from 2H to 1 T phase can be achieved in monolayer MoS 2 by annealing, 10 electric doping, 11,12 applying strain 13 or electron-beam irradiating.…”

Label-Free Immunodetection in High Ionic Strength Solutions Using Carbon Nanotube Transistors with Nanobody Receptors

“…Over the past years, many different nanomaterials have been investigated as channel materials for FET fabrication, including semiconducting nanowires [1], carbon nanotubes [2], graphene [3], organic semiconductors [4] and other layered two-dimensional materials [5]. Among these different materials, carbon nanotubes combine excellent electronic and mechanical properties with the possibility of solution-based processing, rendering them useful e.g., for low-cost printed electronics [6] and sensors.…”

MoS2 based dual input logic AND gate

“…1,2 Monolayers can be obtained via exfoliation of macroscopic MoS 2 crystals [3][4][5][6] or via chemical vapor deposition (CVD) of selected Mo containing compounds in a gaseous sulfur rich environment. [7][8][9][10][11][12] Pristine MoS 2 is a n-type semiconductor typically characterized in a field effect transistor (FET) configuration with a global gate potential that is responsible for the transistor action.…”