MoS2 based dual input logic AND gate

Abstract

Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ∼ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.

Channel-protecting fabrication of top-gate MoS2 transistor arrays

“…conventional mechanical exfoliation, chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been experimentally confirmed with capability in preparing highquality wafer-scale TMD thin films [6][7][8][9][10]. Both methods have been tested in building device arrays and even simple logic circuits [11,12].…”

ReS2/h‐BN/Graphene Heterostructure Based Multifunctional Devices: Tunneling Diodes, FETs, Logic Gates, and Memory

“…Recent studies with direct bandgap multilayer ReS2 (~ 1.4 -1.5 eV) have reported various electronics and optoelectronics applications. [11][12][13][14][15] Different MIS-type device structures have been explored using 2d material based heterostructures 3,[16][17][18][19][20] , as has their device application 21 and logic gate operation 9,[22][23][24] . However, little work has been reported on ReS2 based heterostructure in relation to MIS-type tunnel diodes with a view to using these diodes for logic gate operation and the heterostructure for multifunctional device applications.…”