RF-sputtered MoS2 films revealing the characteristics of bulk type II orientation on GaAs are reported for the first time. It is found that RF power and temperature have a pronounced effect on film morphology. Type II bulk-oriented films are obtained with a combination of low RF power and high substrate temperature. The results on GaAs are successfully interpreted within the context of an extension to the imperfection nucleation model of film formation. Films deposited on glass display an unusual morphology consisting of two distinct phases. Such phases may be related to the presence of sodium in the glass that leads to chemical texturing via a sodium thio-molybdate phase.
The growth of a MoS2 layer on a GaAs(111) substrate produces a highly strained interface layer, which relaxes via generation of dislocations. Using high-resolution X-ray diffractometry in the triple-axis scheme we investigated this interfacial layer, which results from dipping an epi-ready GaAs wafer in ammonium sulphide, followed by deposition of an RF-sputtered MoS2 layer. The dislocation density revealed from the measurements is of the 106 cm-2. This suggests that high efficiency (~20%) MoS2/GaAs heterojunction photovoltaic devices are feasible.
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