Thin-film Si1−xGex HIT solar cells

Hadi, Sabina Abdul; Hashemi, Pouya; DiLello, Nicole; Polyzoeva, Evelina; Nayfeh, Ammar; Hoyt, Judy L.

doi:10.1016/j.solener.2014.01.039

Cited by 44 publications

(13 citation statements)

References 11 publications

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“…Then 80 nm of ITO was sputtered on the top layer using RF sputtering tool (http://www.mvsystemsinc.com/ researchand-development-services, 2014). More details of the solar cell fabrication process can be found in (Abdul Hadi et al, 2014Hadi et al, , 2011Chowdhury et al, 2014;Islam et al, 2013). Afterwards 100 nm Au nanoparticles dispersed in Phosphate Buffered Saline (PBS) (http:// www.sigmaaldrich.com/materials-science/nanomaterials/ gold-nanoparticles, 2014) solution were spin-coated on top of ITO.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

et al. 2015

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In this paper, the effect of gold nanoparticles on n-i-p a-Si:H solar cells with different intrinsic layer (i-layer) thicknesses has been studied. 100 nm and 500 nm i-layer based n-i-p a-Si:H solar cells were fabricated and colloidal gold (Au) nanoparticles dispersed in water-based solution were spin-coated on the top surface of the solar cells. The Au nanoparticles are of spherical shape and have 100 nm diameter. Electrical and quantum efficiency measurements were carried out and the results show an increase in short-circuit current density (J sc ), efficiency and external quantum efficiency (EQE) with the incorporation of the nanoparticles on both cells. J sc increases from 5.91 mA/cm 2 to 6.5 mA/cm 2 ($10% relative increase) and efficiency increases from 3.38% to 3.97% ($17.5% relative increase) for the 100 nm i-layer solar cell after plasmonic enhancement whereas J sc increases from 9.34 mA/cm 2 to 10.1 mA/cm 2 ($7.5% relative increase) and efficiency increases from 4.27% to 4.99% ($16.9% relative increase) for the 500 nm i-layer cell. The results show that plasmonic enhancement is more effective in 100 nm than 500 nm i-layer thickness for a-Si:H solar cells. Moreover, the results are discussed in terms of light absorption and electron hole pair generation.

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Section: Introductionmentioning

confidence: 99%

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

et al. 2015

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“…Germanium (Ge) is a critical optical material due to its high charge-carrier mobility, high absorption coefficient, with a low energy bandgap (0.66 eV), which allows for absorption in a wide wavelength range up to ∼1800 nm. The interest in Ge architecture stems from the fact that Ge optical components are used in thermal imaging, CO 2 lasers, night vision systems, and various other applications such as image sensors, photodetectors, and solar cells. − This includes multijunction as well as single-junction solar cells − and photovoltaic systems. , To incorporate Ge in the silicon technology, there has been a lot of effort to grow high quality Ge thin films on Si substrates using low cost and temperature deposition techniques. − However, it is challenging due to incompatibility with conventional CMOS processes. Multiple issues, such as strained films due to the lattice-mismatch and high surface roughness discontinuous growth, have hindered Ge-based devices on Si. − …”

Section: Introductionmentioning

confidence: 99%

Strong Reduction in Ge Film Reflectivity by an Overlayer of 3 nm Si Nanoparticles: Implications for Photovoltaics

Rezk

Hadi

Ashraf

et al. 2021

ACS Appl. Nano Mater.

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We examine the effect of a top nanofilm of 3 nm silicon nanoparticles (Si-NPs) on the spectral features of the reflectivity of germanium (Ge). We use a 450 nm Ge layer grown by low temperature plasma enhanced chemical vapor deposition on a crystalline Si substrate. The Si-NPs are drop casted incrementally on the Ge/Si structure from a particle colloid, forming a nanofilm of increasing thickness up to 30 nm. The stack is characterized using luminescence microscopy, atomic force microscopy, transmission electron microscopy, and reflectivity spectroscopy. The reflectance of the stack is measured over UV/ visible and infrared range 4.8−0.8 eV. With the increasing thickness of the Si nanocoating, the results show a strong reduction in the reflectivity of Ge in the visible and blue-UV region of the spectrum with less effect in the infrared, as well as a difference in reflectance at the adjacent lying complex of Λ and L transitions of Ge. The strong reduction in the visible/UV range is understood in terms of a near overlap of the band to band transitions of Si-NPs and Ge. The diminished response in the infrared contributes to shifting of the bandgap of Si-NPs from the infrared to the visible due to quantum confinement. Furthermore, optical properties of Si-NP are estimated and samples are analyzed using Modified Transfer Matrix Method model. The strong reduction of reflectivity of Ge in the visible-UV region is very useful in photovoltaics, with special emphasis on Ge-based multijunction solar cells.

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“…This type of cell combines the high efficiency of c-Si and low temperature deposition technology of a-Si, which leads to a sufficient cost reduction. This is one of the main reasons HIT cells have gained a lot of attention as they can be an alternative to conventional thick c-Si solar cells [1][2][3][4][5][6][7]. Finding new ways to reduce the reflection of the incoming light is vital to further improve the performance of thin-film HIT solar cells.…”

Section: Introductionmentioning

confidence: 99%

Corrigendum: Enhancement in c-Si solar cells using 16 nm InN nanoparticles (2016Mater. Res. Express3056202)

Chowdhury¹,

Alnuaimi²,

Alkis

et al. 2016

Mater. Res. Express

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Thin-film Si1−xGex HIT solar cells

Cited by 44 publications

References 11 publications

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

Strong Reduction in Ge Film Reflectivity by an Overlayer of 3 nm Si Nanoparticles: Implications for Photovoltaics

Corrigendum: Enhancement in c-Si solar cells using 16 nm InN nanoparticles (2016Mater. Res. Express3056202)

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