Thin-film deposition modeling of hydrogenated amorphous silicon in the afterglow of argon plasma

Chau, Shiu‐Wu; Pham, Quang-Vinh; Nguyen, Mylinh

doi:10.1016/j.compfluid.2013.09.021

Cited by 4 publications

(3 citation statements)

References 19 publications

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“…Meanwhile, precursors from group III such as trimethyl gallium (TMG), are injected from the side inlet of the showerhead, coupled to the substrate via the other set of holes and heated by the pedestal. As multiple physics including fluid mechanics, chemical reaction, heat and mass transfer, and electromagnetics needs to be coupled to simulate N 2 ICP, the geometry of the reactor is simplified to a 2D axisymmetric model, as shown in figure 1(b), to reduce the computational consumption [11,15,16].…”

Section: Geometric Model and The Principle Of Ion Filtermentioning

confidence: 99%

Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films

Yu¹,

Wang²,

Luo³

et al. 2019

J. Phys. D: Appl. Phys.

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The spatial distribution of N 2 plasma in the reactor chamber of an ion-filtered inductivelycoupled-plasma metal-organic-chemical-vapor-deposition (IF-ICP-MOCVD) was studied. The selective absorption of the ion filter with a showerhead structure was simulated based on the simplification of the reaction model of N 2 plasma and demonstrated by the optical emission spectroscopy and the growth of GaN film. The simulation shows that the number density of nitrogen ions on the pedestal was reduced by one order of magnitude with the showerhead ion filter compared to the counterpart without any ion filter, and that matches the measured spectra of OES. Meanwhile, N 2 (A 3 Σ + u )-a nitrogen metastable particle crucial to the growth of III-nitrides-keeps a moderate number density and the ratio of the number density of N 2 (A 3 Σ + u ) to the number density of nitrogen ions was increased up to 4-5 times as the showerhead ion filter has a relatively high transmission to nitrogen metastable particles. GaN films were successfully grown with our home-made IF-ICP-MOCVD at 480 °C, which shows great potential in the epitaxy of III-nitrides at low temperature.

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Section: Geometric Model and The Principle Of Ion Filtermentioning

confidence: 99%

Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films

Yu¹,

Wang²,

Luo³

et al. 2019

J. Phys. D: Appl. Phys.

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“…[1][2][3][4][5] In a typical PECVD, the substrate is located in the glow region where there are both neutral radicals and ions. A considerable number of literature 2,[6][7][8][9] have pointed out that neutral radicals, especially metastable species, predominantly contribute to the gas-phase and surface reactions while ions are harmful to film quality due to positive ion bombardment. Remote plasma has been proposed to reduce the ion bombardment in several previous research works.…”

Section: Introductionmentioning

confidence: 99%

Modeling and simulation of ion-filtered inductively coupled plasma using argon plasma

Wu¹,

Wang²,

Zhang³

et al. 2015

Jpn. J. Appl. Phys.

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In recent years it has become clear that a nonlinear formulation of test-particle theories has to be preferred over the traditional quasilinear approach. Nonlinear transport theories such as the nonlinear guiding-centre theory or the weakly nonlinear theory are based on certain assumptions which cannot be derived systematically. One of the key inputs into these theories is the velocity correlation function. In the current paper the Taylor-Green-Kubo formulation is used to deduce a general relation between the mean square displacement of the particle, the running diffusion coefficient and the velocity correlation function. This relation can be used to extract velocity correlation function from test-particle simulations and from transport theories. The latter possibility is the subject of the current paper. These results, which are essential for the improvement of nonlinear transport theories, are compared with standard models applied previously. An additional result of this paper is that for realistic wave spectra, perpendicular diffusion is recovered even within the magnetostatic slab model.

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“…Usually, O 2 + and O radical species (O 2 * and O*) are generated in the gas phase of plasma chemical vapor deposition (22). As the functional groups on the PEN film surface were destroyed as a result of dissociate of oxygen molecules, oxygen atoms and electrons, and it reacted with functional groups on the surface.…”

Section: Each Spectrum Of C1s Investigated By Xps Decomposed Into 3 Cmentioning

confidence: 99%

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

Thungsuk

Yuji

Mungkung

et al. 2015

Journal of Advanced Oxidation Technologies

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Abstract:The low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with nonthermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O 2 gas was used in the plasma treatment. The oxygen gas flow rate was between 0.1 L/min and 0.5 L/min, whereas the Ar gas flow rate was set at 10 L/min. The surface was investigated by contact angle meter and X-ray photoelectron spectroscopy (XPS) to determine the differences between untreated and treated surfaces. The results indicated that the low-pressure high-frequency plasma chemical vapor deposition system could be used for surface modification.

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Thin-film deposition modeling of hydrogenated amorphous silicon in the afterglow of argon plasma

Cited by 4 publications

References 19 publications

Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films

Spatial distribution study of a nitrogen plasma in an ion-filtered inductively coupled plasma used to grow GaN films

Modeling and simulation of ion-filtered inductively coupled plasma using argon plasma

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

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