The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

Thungsuk, Nuttee; Yuji, Toshifumi; Mungkung, Narong; Okamura, Yoshimi; Fujimaru, Atsushi; Kinoshita, Hiroyuki; Hirotani, Daisuke; Kawano, Masahiro; Kasayapanand, Nat

doi:10.1515/jaots-2015-0115

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“…In addition, by this process, organic contaminants can be removed from the surface and the surface can be controllably modified such as changing the chemical functional groups on the surface. [5][6][7] From the experimental results of these authors thus far, it has been clarified that, in the gas mixture of Ar + O 2 in the vacuum chamber, the electrons and oxygen radicals generated in the plasma temporarily adhere to the poly(ethylene naphthalate) (PEN) film surface and cause chemical reaction on the surface to improve hydrophilicity. [8][9][10] Thus, plasma surface treatment is a useful technique for enhancing the adhesive properties in the cluster manufacturing industry of flexible solar cells.…”

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confidence: 99%

Surface chemical structure of poly(ethylene naphthalate) films during degradation in low-pressure high-frequency plasma treatments

Kamata

Yuji

Thungsuk

et al. 2018

Jpn. J. Appl. Phys.

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The surface chemical structure of poly(ethylene naphthalate) (PEN) films treated with a low-pressure, high-frequency plasma was investigated by storing in a box at room temperature to protect the PEN film surface from dust. The functional groups on the PEN film surface changed over time. The functional groups of -C=O, -COH, and -COOH were abundant in the Ar + O 2 mixture gas plasma-treated PEN samples as compared with those in untreated PEN samples. The changes occurred rapidly after 2 d following the plasma treatment, reaching steady states 8 d after the treatment. Hydrophobicity had an inverse relationship with the concentration of these functional groups on the surface. Thus, the effect of the lowpressure high-frequency plasma treatment on PEN varies as a function of storage time. This means that radical oxygen and oxygen molecules are clearly generated in the plasma, and this is one index to confirm that radical reaction has definitely occurred between the gas and the PEN film surface with a low-pressure high-frequency plasma.

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