Thickness-Dependent Structural, Electrical, and Optical Properties of ZnS Thin Films Deposited by Thermal Evaporation

Vishwakarma, Rahul

doi:10.15407/ujpe62.05.0422

Cited by 7 publications

(2 citation statements)

References 28 publications

(25 reference statements)

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“…The trend in resistivity and electrical conductivity obtained is in line with results obtained for semiconducting thin films by [55][56][57]. The reduction in the electrical resistivity or increase in the electrical conductivity is due to the improvement in the crystallinity of the deposited thin films which is a result of the increase in the film thickness [58][59].…”

Section: Electrical Propertiessupporting

confidence: 85%

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Ezenwaka

Okoli²,

Okereke

et al. 2021

Nanoarchitectonics

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Time optimized cobalt-doped zinc selenide thin films have been successfully electrodeposited on fluorine-doped tin oxide substrates. The films were deposited at the varying time of 1 min, 3 mins, and 5 mins respectively. Film thickness, optical, structural, electrical, and morphological properties of the deposited thin films were evaluated. Film thickness estimated using the gravimetric method increased from 294.35 nm to 399.62 nm as deposition time increased. Optical properties showed that the absorbance of the films ranged from 13.58% to 83.15% and was found to increase as deposition time increased. Transmittance ranged from 24.40% to 73.15% and was found to decrease as deposition time increased. The reflectance of the films was found to be low while the energy band gap ranged between 2.10 eV and 2.85 eV. Structural properties confirmed the deposition of ZnSe thin film with crystallite size values that fall between 14.68 nm and 18.60 nm. Dislocation density is ranged from 4.66 × 1015 lines/m2 to 2.97 × 1015 lines/m2 while microstrain ranged between 8.53 × 10-3 and 5.83 × 10-3. Crystallite sizes of the films were found to increase as deposition time increased while dislocation density and microstrain were found to decrease as deposition time increased. Electrical properties showed that the deposited films are semiconducting films with electrical resistivity values of 1.54 × 105 Ω cm-1.83 × 104 Ω cm and electrical conductivity values of 6.30 × 10-6 S/cm-5.47 × 10-5 S/cm. The micrograph of the films showed that the films were made up of nanoparticles and nanofibres of different dimensions. Energy-Dispersive X-Ray Spectroscopy (EDS) spectra of the films confirmed the presence of cobalt, zinc, and selenium.

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Section: Electrical Propertiessupporting

confidence: 85%

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Ezenwaka

Okoli²,

Okereke

et al. 2021

Nanoarchitectonics

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“…Unfortunately, the energy gap of ZnS is quite high (3.6 eV) [6], [12][13][14][15]. Doping is one strategy for reducing the bandgap, thus increasing visible light absorption [16]. There are several techniques available to prepare the ZnS thin films such as thermal evaporation [17,18], chemical bath deposition [19][20][21], electron beam evaporation technique [22], spray pyrolysis [23,24], sputtering technique [25], and Successive on Layer Adsorption and Reaction (SILAR) technique [26].…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Mulyani

Sujitno

Purbandari

et al. 2020

jsmi

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This paper presents the research on the growth of ZnS:Ag:Cu thin film on a glass substrate as a radio-luminescent material. The SRIM/TRIM software is used to determine the optimum thickness based on an energy deposition depth of 5.485 MeV Am 241 alpha radiation source on ZnS:Ag:Cu material. To increase the adhesive strength of the coating, initially, the glass substrate is etched using a plasma glow discharged at 280°C for 15 minutes. Multiple coatings of ZnS:Ag:Cu were etched on the glass substrate; this was carried out using a thermal evaporation technique to achieve the optimal thickness (based on SRIM/TRIM simulation). The thin film thickness was observed using a scanning electron microscope (SEM). The optical properties of the un-etched, etched glass substrate and thin-film were characterized using UV-Vis spectrometer. Based on SRIM/TRIM simulation, the optimal thickness is 22 mm which can be achieved by coating three times. From optical properties of ZnS:Ag:Cu thin film and after being analysed using Taue plot method, it is found that the energy gap of ZnS:Ag:Cu thin film is 2.48 eV. It can be concluded that the addition of Ag and Cu doped decrease the energy gap of ZnS (3.66 eV).

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Thickness dependent studies of chemically grown transparent conducting Cu:ZnS thin films for optoelectronic applications

Khatri

Patel²

2021

Optical Materials

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Thickness-Dependent Structural, Electrical, and Optical Properties of ZnS Thin Films Deposited by Thermal Evaporation

Cited by 7 publications

References 28 publications

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Growth of ZnS:Ag:Cu Thin Film Deposited on Glass Substrates using Thermal Evaporation Technique for Alpha-photovoltaic

Thickness dependent studies of chemically grown transparent conducting Cu:ZnS thin films for optoelectronic applications

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