Thickness dependent studies of chemically grown transparent conducting Cu:ZnS thin films for optoelectronic applications

Khatri, R. P.; Patel, Amitkumar J.

doi:10.1016/j.optmat.2021.111469

Cited by 8 publications

(3 citation statements)

References 34 publications

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“…Synthesis and characterization of thin films have been reported by many researchers [1][2][3]. Physical and chemical deposition techniques [4][5][6] were used to produce binary, ternary, quaternary and pen ternary films.…”

Section: Introductionmentioning

confidence: 99%

Untitled

2022

Int. J. Thin.Film. Sci. Tec.

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Preparation of thin films via chemical and physical deposition technique had been reported by many researchers. The obtained films were characterized by using various tools. Thin films were used in different applications including solar cell, light emitting diode, capacitor, photo detector, ultra violet opto-electronics, and photonic integrated circuit. In this work, the successive ionic layer adsorption and reaction (SILAR) method was used because of low temperature deposition, the simplest and the cheapest deposition method. This is the first time, composition of thin films (under various deposition cycles) was studied using energy dispersive x-ray analysis (EDX). EDX results confirmed that the atomic percentage of cobalt and selenide strongly depended on the number of deposition cycle in the experiment. Larger grain size could be observed for the thin films deposited for 20 cycles based on the field emission scanning electron microscopy analysis.

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Section: Introductionmentioning

confidence: 99%

Untitled

2022

Int. J. Thin.Film. Sci. Tec.

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“…Nowadays they (TCOs) have a wide range of applications in transistors, electrochromic windows, light-emitting diodes, flat panel displays, transparent and high-frequency electronics, etc. [1][2][3]. Many metal oxides such as cadmium oxide (CdO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), and tin oxide (SnO 2 ) are known to be TCOs for their unique combination of low resistivity and high transmittance [4].…”

Section: Introductionmentioning

confidence: 99%

Improved optoelectronic properties of Yttrium co-doped CdO:Zn thin films fabricated by nebulizer spray pyrolysis method for TCO applications

babu

Murthy²,

Raj³

et al. 2021

Phys. Scr.

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To understand the effect of Yttrium (Y) co-doping with CdO:Zn towards optoelectronics applications, the thin films were coated by the nebulizer spray pyrolysis route. The microstructural studies (XRD) reveals that the crystallite size decreases from 20 to 15 nm with the increase of Y concentrations. The surface topography of the films has been strongly influenced by the Y doping which is evident from the AFM images. The presence of Cd, O, Zn, and Y has been confirmed through the EDX spectrum. The transparency is higher (81%) for the CdO:Zn-Y(1.5%) film. The decreasing trend in the values of the optical dielectric constant is observed with increases in yttrium content. The enhancement in the carrier concentration (12 × 1020cm−3) and reduction in the electrical resistivity (8.4 × 10−4Ωcm) have been observed for the CdO:Zn-Y(1.5%) film via the Hall-effect measurements. In addition, the heterojunction p-Si/n-CdO:Zn-Y(1.5%) photodiode was fabricated to understand the optical sensing properties. The current values of the fabricated photodiode are found to enhance as the intensity of the illumination increases from1.0 to 3.0 mW cm−2. Moreover, the photodiode exhibits the highest responsivity, detectivity, and external quantum efficiency value of 1.45 AW−1, 6 × 109 Jones, and 339%, respectively with excellent switching speeds. This work provided a guideline to develop a TCO layer and photodiode towards the applications of optoelectronic-based devices.

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“…Bu film hazırlama teknikleri içerisinden sol-jel tekniği yüksek kalite ve saflık, az maliyetli, kolay, çevre dostu ve pratik olması gibi avantajlara sahiptir. Bu avantajlarından dolayı sunulan çalışmada sözü edilen teknik Zn1-xLaxS (x= 0 ve 0.05) nano yapılı ince filmleri yüzey yapılarının farklı tekniklerle incelenmesi için sentezlendi [5][6][7][8][9][10]. Daha önce La katkılı ZnS ince filmleri az çalışıldığı ve La katkı miktarının ZnS yüzey durmalarına etkisini incelemek için hazırlanmıştır.…”

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ZnxLaxS İnce Filmlerinin Yüzeysel Analizleri

Göktaş

Tumbul

2023

ICSIS

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– Bu çalışmada çözelti yöntemine dayalı olarak üretilen ZnxLaxS (ZnLaS) ince filmlerinin yüzeyanalizleri X-ışını fotoelektron spektroskopisi XPS, atomik kuvvet mikroskobu, AFM ve taramalı elektronmikroskobu, SEM cihazları ile incelendi. XPS ölçümleri ZnLaS ince filmlerinde Zn+2, La+3 ve S-2iyonlarının varlığını ve Zn-S bağlarının oluştuğunu teyit etti. SEM analizleri ZnLaS film yüzeylerininhomojen ve yoğun olduğunu ve yüzeylerde az da olsa mikro boyutlu çatlakların olduğunu gösterdi. Aynızamanda film yüzeylerindeki parçacık boyutlarının değiştiği de SEM analizlerinden anlaşıldı. SEMcihazına bağlı enerji dağılım x-ışını spektrometresi (EDX) film örneklerinde Zn, La ve S elementlerininvarlığını tespit etti. İki ve üç boyutlu AFM görüntülerinde ZnLaS ince filmlerinin tane boyutlarının La katkımiktarına göre değiştiğini ve yüzey pürüzlülüğünün arttığı gözlemlendi. Elde edilen bu sonuçlar filmlerinoptik ve yüzeysel özelliklerinin ön plana çıktığı güneş pili ve fotokatalitik gibi uygulamalara uygunolabileceği düşünülmektedir.

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Thickness dependent studies of chemically grown transparent conducting Cu:ZnS thin films for optoelectronic applications

Cited by 8 publications

References 34 publications

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Improved optoelectronic properties of Yttrium co-doped CdO:Zn thin films fabricated by nebulizer spray pyrolysis method for TCO applications

ZnxLaxS İnce Filmlerinin Yüzeysel Analizleri

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