The nanocrystalline ZnS semiconducting thin films of 500 nm thickness have been deposited on glass substrate at different substrate temperatures (T s ) by thermal evaporation technique. The structural property of deposited thin films has been measured by X-ray diffraction, scanning electron microscopy, and Energy dispersive analysis of X-ray. The electrical and optical properties of thin films have been determined by D.C. two point probe and ultraviolet visible spectroscopy measurements. The X-ray diffraction patterns show that thin films have cubic structure. The electrical resistivity of thin films has decreased from 0.36 9 10 6 to 0.15 9 10 6 X cm as substrate temperature increases from 300 to 400 K. It shows that films have semiconducting in nature. The grain size and electrical conductivity of the thin films have increased as the deposition temperature increased while dislocation density, activation energy, and band gap decreased. The minimum band gap 3.43 eV has been found.

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Zinc sulfide (ZnS) thin films are deposited onto an ultrasonically clean glass substrate, by using the thermal evaporation technique at room temperature. The film thickness was varied in the range from 400 nm to 1300 nm. The X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive analysis of X-rays (EDAX) are used to characterize the structural properties of films. The electrical and optical properties of films are characterized with a dc two-point probe, the Hall effect, and ultraviolet visible absorption spectra. The XRD spectra indicate that the thin films have polycrystalline nature and possess the cubic structure with (111) preferential orientation. The diffraction patterns are sharpen with increase in the film thickness. Scanning electron microscope data disclose that the films have nanograins approximately 97.89 nm in size. A reduction in the resistivity shows that the films are semiconductors in nature. For a film thickness of 1200 nm, the maximum mobility is 26.03 × 10 1 cm 2 /Vs, minimum resistivity is 0.08 × 10 6 (Ohm•cm), and band gap is 3.26 eV. The film thickness has been optimized on the basis of the observed properties.

The micro-sized hole is highly required in biomedical, electronics, optical, aerospace components that are not feasible by the traditional machining process. This study highlights the precise micromachining on the polymer nanocomposites modified by graphene nanoplatelet (GNP) and carbon fiber. The electric discharge machining (EDM) of polymeric composites is too complicated due to its lower conductivity and abrasive nature. The little concentration of GNP in the epoxy matrix expands the machinability aspect of the polymers. The reinforcing conductive particle is used for the micro EDM (μEDM) of the laminate nanocomposites with a rotating tool electrode. The Taguchi concept-based orthogonal array was used to execute the machining test. The material removal rate (MRR) during the μEDM of the developed laminate nanocomposites was estimated using the sine cosine algorithm. The tests were conducted at three levels of process constraints: voltages, length of the pulses, and weight % of the GNP. The higher value of MRR is obtained at the optimal condition of voltage at three level, length of pulse two level, and weight % of GNP three level. The quality of the machined hole and the surface damages during the machining test were investigated by a field electron scanning electron microscope. The microscopy findings reveal that GNP addition significantly influences the nanocomposite micromachining.