Thickness-dependent ferroelectric behavior of predominantly (117)-oriented Bi3.15Nd0.85Ti3O12 thin-film capacitors

Abstract

Ferroelectric hysteresis loops, remanent polarization, coercive field, and leakage current characteristics were investigated by increasing the film thickness (from 103 nm to 401 nm) of predominantly (117)-oriented Bi3.15Nd0.85Ti3O12 films. The thickness dependence of the coercive fields shows log coercive field vs. log thickness with a slope of approximately −0.65, which is characteristics of the Kay–Dunn scaling law. The films exhibited very low leakage current on the order of 10−7A/cm2 at an applied electric field of 100 kV/cm. Without a discernible thickness-dependence behavior, the leakage current characteristics, including both Schottky emission and space-charge-limited conduction, were well described by a modified Schottky contact model.

Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation

“…16 To test this, highly c-axis-oriented BNTZ x = 0.1 thin films were grown on Pt/TiO 2 /SiO 2 /Si(100) substrates by optimizing parameters such as different spin rates and different heating rates during crystallization. 8 A spin-coating rate of 3000 rpm and heating rate of 38°C/min were used in the case of (117)-oriented BNTZ films, whereas these parameters were set at 5500 rpm and 10°C/min for predominately c-axisoriented films. The c-axis-oriented BNTZ film showed high 2P r of 14.6 lC/cm 2 and exhibited fatigue-free behavior up to 10 8 switching cycles at frequency of 50 kHz, as shown in Figs.…”

“…18 Thin films were fabricated on Pt(111)/Ti/ SiO 2 /Si(100) substrates using the chemical solution deposition technique, details of which are reported elsewhere. 8 Annealing temperature of 600°C to 750°C was needed to promote the amorphous phase of the BNT films to a crystalline phase. Here, the BNTZ thin films were obtained at annealing temperature of 750°C, considering that Zr 4+ substitution may improve the upper limit of the optimal annealing temperature.…”

Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO3 thin-film memristors

“…The most likely conduction mechanisms include electrode/bulk interface-dominated mechanisms: Schottky emission (SE), and Fowler-Nordheim (FN) tunneling, and bulk-limited conduction mechanisms: space-charge-limited conduction (SCLC) and Poole-Frenkel emission (PF). [41][42][43] We used the above models to analyze the data, as shown in the ESI † ( Fig. S3 and S4).…”

Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process

“…Mn 4+ can slow down the transformation from Ti 4+ to Ti 3+ and reduces a number of pinned domain walls [6,7]. However, high leakage current and poor fatigue endurance can restrict the application of BNTM thin films with Pt electrodes due to the evaporation of bismuth under high annealing temperature [8,9]. For the purpose of understanding the nature of the fatigue behaviors of BIT thin films, it is necessary to understand how the Nd doping affects the domain dynamics.…”