Ferroelectric diodes hold significant promise for potential applications in nonvolatile memories and logic devices. The nondestructive readout of binary information can be achieved by using a bipolar switching with two different conductances under two opposite polarizations in a ferroelectric diode, which exhibits ultrahigh density and ultrafast operating speed. However, the diode current is limited because most ferroelectrics have wide band gaps. Therefore, in modern micromemory circuits, obtaining a sufficient ferroresistive diode current to detect the status of memory stably is a major challenge. Herein, a high current-intensity resistive switching behavior in nanometer-thick BiFe 0.9 Co 0.1 O 3 films is reported. Epitaxial films were prepared on a (00l) Nb/SrTiO 3 single-crystal substrate via the chemical solution epitaxial deposition method. The conductance of the BiFeO 3 diode improved by up to 200 times that of the original. This improvement can be attributed to the bandgap decrease in ferroelectric film induced by Co doping, as confirmed by spectrophotometry and firstprinciples calculations. This device shows a stable bipolar resistive switching feature, a satisfactory switching ratio of ∼10 3 , good data retention, and antifatigue characteristics for up to 10 7 cycles. The results are useful in exploring the potential applications of a ferroelectric diode in RRAM.
Oxide-based memristors have good application prospects in the brain-like computing of the in-memory computing architecture, which can effectively solve the memory wall and power wall problems in the bottleneck of...
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