Origin of resistive-switching behaviors of chemical solution deposition-derived BiFeO₃ thin-film memristors

Abstract

Oxide-based memristors have good application prospects in the brain-like computing of the in-memory computing architecture, which can effectively solve the memory wall and power wall problems in the bottleneck of...

Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices

“…90−93 In addition, also perovskites without Ti cations, like BiFeO 3 , tend to show a type 1 I−V curve. 73,75 For the resistive switching in TiO 2 the same behavior is detected while not having a perovskite structure. 68 In addition, the conduction in resistive switching VCM cells based on In 2 O 3 and SnO 2 show the type 1 conduction.…”

“…The type of curve is related to the used materials. The strong exponential type 1 is often found in Ti-based perovskite oxide materials, such as SrTiO 3 , BaTiO 3 , CaTiO 3 , or Mg 0.5 Ca 0.5 TiO 3 . − In addition, also perovskites without Ti cations, like BiFeO 3 , tend to show a type 1 I–V curve. , For the resistive switching in TiO 2 the same behavior is detected while not having a perovskite structure . In addition, the conduction in resistive switching VCM cells based on In 2 O 3 and SnO 2 show the type 1 conduction. , The widely used material HfO 2 has been identified as type 2 conduction material, but also other materials such as Ta 2 O 5 , Nb 2 O 5 , ZrO 2 , or Lu 2 O 3 ,,,, show this type of conduction.…”

“…While the type 1 curve (Figure a) shows very nonlinear (exponential), asymmetric I–V characteristics with respect to the voltage polarity, the type 2 curve is rather symmetric and much more linear. Examples for such a strong nonlinear conduction of type 1 are reported frequently in the literature. ,− In the second type of conduction, the nonlinearity in the same voltage range (≈0.1–1 V) is clearly weaker and example I–V curves are reported as well. ,− …”

Bipolar Resistive Switching Behaviour of Polycrystalline BiFeO3 Thin Films Synthesized via Sol-gel Assisted Spin Coating Technique

“…Recently, these naturally occurring oxygen vacancies in BFO have been linked to an astounding nonvolatile memory effect [2,3,5,6,9,10]. Because of its simple structure, long retention time, small size, and fast switching speed, reversible resistive switching (RS) behavior is becoming increasingly important among nonvolatile memories studied thus far [7,10,11]. An intensive investigation leads to an understanding of the resistive switching mechanisms in oxides by considering the role of oxygen vacancy migration under an applied electric field [7,10,11].…”

“…Because of its simple structure, long retention time, small size, and fast switching speed, reversible resistive switching (RS) behavior is becoming increasingly important among nonvolatile memories studied thus far [7,10,11]. An intensive investigation leads to an understanding of the resistive switching mechanisms in oxides by considering the role of oxygen vacancy migration under an applied electric field [7,10,11]. This vacancy migration causes conductive filaments to form and rupture within the filamentary type oxide resistive switching [7,10,11].…”