2016
DOI: 10.1007/s11664-016-4508-3
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Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation

Abstract: Nd 3+ /Zr 4+ -cosubstituted bismuth titanate (BNTZ x , x = 0, 0.05, 0.1, 0.3, and 0.5) thin films have been fabricated by chemical solution deposition and their polarization hysteresis loops, leakage current, and capacitance butterfly loops investigated. Results show that, at Zr content of x = 0.1, both capacitance and remanent polarization can be greatly improved. The BNTZ 0.1 film also exhibits fatigue-free, excellent leakage current characteristics (I % 9.44 9 10 À9 A) at applied voltage of 3 V. High-qualit… Show more

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“…4,5 This small reduction is in contrast to Asite doping, which can reduce T c by several hundred kelvin. 9 BiT films doped at A-site with elements such as La 10 or Nd 11,12 exhibit good polarization and fatigue properties.…”
Section: Introductionmentioning
confidence: 99%
“…4,5 This small reduction is in contrast to Asite doping, which can reduce T c by several hundred kelvin. 9 BiT films doped at A-site with elements such as La 10 or Nd 11,12 exhibit good polarization and fatigue properties.…”
Section: Introductionmentioning
confidence: 99%