Effects of Nb Content on the Ferroelectric and Dielectric Properties of Nb/Nd-Co-doped Bi4Ti3O12 Thin Films

Lead-free films of Bi4-xNdxTi3O12 were deposited on Pt(111)/Ti/SiO2/Si(100) substrate via spin-coating methods. It is shown that there are no secondary phases in Bi4-xNdxTi3O12 films and clear interfaces between the Bi4-xNdxTi3O12 films and substrates when the films are annealed at 700 ℃. And the Bi4-xNdxTi3O12 films also exhibit a blue light emission peak at 437 nm and a yellow light emission peak at 580 nm. There are narrower band gaps, higher dielectric constant and lower dielectric loss when Nd 3+ concentration varies from 0 to 0.85. And the Bi3.15Nd0.85Ti3O12 film possesses the minimum of band gap energy (2.67 eV). Moreover, Bi3.55Nd0.45Ti3O12 film exhibits a minimal leakage current density and a maximal remanent polarization, which is highly beneficial for the potential applications in multi-functional devices.

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Effect of the doping concentration of Er3+ on ferroelectric properties of Bi4−xErxTi3O12 films

Shi

Men

Chen

et al. 2022

J Mater Sci: Mater Electron

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Effects of Nb Content on the Ferroelectric and Dielectric Properties of Nb/Nd-Co-doped Bi4Ti3O12 Thin Films

Cited by 8 publications

References 25 publications

Ferroelectric, ferromagnetic, and magnetoelectric properties of Bi3.15Nd0.85Ti2.9Zr0.1O12–CoFe2O4 composite films with large magnetoelectric coupling effect

Ferroelectric, ferromagnetic, and magnetoelectric properties of Bi3.15Nd0.85Ti2.9Zr0.1O12–CoFe2O4 composite films with large magnetoelectric coupling effect

Effect of concentration of Nd3+ on the photoluminescence and ferroelectric properties of Bi4-xNdxTi3O12 films

Effect of the doping concentration of Er3+ on ferroelectric properties of Bi4−xErxTi3O12 films

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